Kosarev Alexander N, Chaldyshev Vladimir V, Cherkashin Nikolay
Ioffe Institute, 26 Politekhnicheskaya Str., 194021 Saint Petersburg, Russia.
CEMES-CNRS and Université de Toulouse, 29 Rue J. Marvig, 31055 Toulouse, France.
Nanomaterials (Basel). 2022 Jun 8;12(12):1967. doi: 10.3390/nano12121967.
We develop a model of an epitaxial self-organized InGaAs quantum dot buried in GaAs, which takes into account experimentally determined indium distribution inside the QD, its geometry and crystallography. The problem of solid mechanics was solved to determine the stress-strain field. Then, the parameters of the electron and hole ground states were evaluated by solving the problem of the quantum mechanics on the same mesh. The results of calculations appeared to be reasonably well consistent with experimentally recorded optical emission spectra for the QDs in the same sample. The experimentally-verified modeling reveals a bagel-like shape of the hole wave function at the ground state, which should considerably impact the optical and magnetic properties of the QDs. Such shape of the wave function is beyond the predictions of simplified models with uniform indium distribution.
我们建立了一个埋于砷化镓中的外延自组织铟镓砷量子点模型，该模型考虑了通过实验确定的量子点内部铟分布、其几何形状和晶体学。通过求解固体力学问题来确定应力应变场。然后，在同一网格上通过求解量子力学问题来评估电子和空穴基态的参数。计算结果与同一样品中量子点的实验记录光发射光谱相当吻合。经实验验证的模型揭示了基态空穴波函数呈百吉饼状，这将对量子点的光学和磁性产生重大影响。这种波函数形状超出了铟分布均匀的简化模型的预测范围。
