Struyk A F, Scoggan K A, Bulman D E, Cannon S C
Departments of Neurology, Massachusetts General Hospital, and Neurobiology, Harvard Medical School, Boston, Massachusetts 02114, USA.
J Neurosci. 2000 Dec 1;20(23):8610-7. doi: 10.1523/JNEUROSCI.20-23-08610.2000.
Missense mutations of the human skeletal muscle voltage-gated Na channel (hSkM1) underlie a variety of diseases, including hyperkalemic periodic paralysis (HyperPP), paramyotonia congenita, and potassium-aggravated myotonia. Another disorder of sarcolemmal excitability, hypokalemic periodic paralysis (HypoPP), which is usually caused by missense mutations of the S4 voltage sensors of the L-type Ca channel, was associated recently in one family with a mutation in the outermost arginine of the IIS4 voltage sensor (R669H) of hSkM1 (Bulman et al., 1999). Intriguingly, an arginine-to-histidine mutation at the homologous position in the L-type Ca(2+) channel (R528H) is a common cause of HypoPP. We have studied the gating properties of the hSkM1-R669H mutant Na channel experimentally in human embryonic kidney cells and found that it has no significant effects on activation or fast inactivation but does cause an enhancement of slow inactivation. R669H channels exhibit an approximately 10 mV hyperpolarized shift in the voltage dependence of slow inactivation and a twofold to fivefold prolongation of recovery after prolonged depolarization. In contrast, slow inactivation is often disrupted in HyperPP-associated Na channel mutants. These results demonstrate that, in R669H-associated HypoPP, enhanced slow inactivation does not preclude, and may contribute to, prolonged attacks of weakness and add support to previous evidence implicating the IIS4 voltage sensor in slow-inactivation gating.
人类骨骼肌电压门控钠通道(hSkM1)的错义突变是多种疾病的基础,包括高钾性周期性麻痹(HyperPP)、先天性副肌强直和钾加重性肌强直。另一种肌膜兴奋性疾病,低钾性周期性麻痹(HypoPP),通常由L型钙通道S4电压传感器的错义突变引起,最近在一个家族中发现与hSkM1的IIS4电压传感器最外层精氨酸突变(R669H)有关(布尔曼等人,1999年)。有趣的是,L型钙通道(R528H)同源位置的精氨酸到组氨酸突变是HypoPP的常见原因。我们在人胚肾细胞中通过实验研究了hSkM1-R669H突变钠通道的门控特性,发现它对激活或快速失活没有显著影响,但确实导致慢失活增强。R669H通道在慢失活的电压依赖性方面表现出约10 mV的超极化位移,并且在长时间去极化后恢复时间延长了两倍至五倍。相比之下,与HyperPP相关的钠通道突变体中慢失活常常被破坏。这些结果表明,在与R669H相关的HypoPP中,增强的慢失活并不排除,而且可能导致肌无力发作延长,并为先前暗示IIS4电压传感器参与慢失活门控的证据提供了支持。