Ding G R, Wake K, Taki M, Miyakoshi J
Department of Radiation Medicine, The Fourth Military Medical University, Xi'an, China.
Life Sci. 2001 Jan 19;68(9):1041-6. doi: 10.1016/s0024-3205(00)01007-9.
Previously, we reported that exposure to extremely low frequency magnetic field (400 mT) increased in hypoxanthine-guanine phosphoribosyl transferase (HPRT) gene mutations. However, it is unclear these mutations were induced by magnetic field (MF), electric field (EF), or both. To explore this question, a new exposure apparatus for EF was manufactured. We observed an increase in HPRT gene mutations in Chinese hamster ovary (CHO) cells after exposure to EF (10 V/m, 60 Hz) for 10 h. The mutant frequency by EF-exposure was an approximate 2-fold of that by sham-exposure. Our data suggest that the mutations induced by exposure of cells to the variable magnetic field at 400 mT may be, in part, due to the induced EF.
此前，我们报道过暴露于极低频磁场（400 mT）会增加次黄嘌呤 - 鸟嘌呤磷酸核糖转移酶（HPRT）基因突变。然而，尚不清楚这些突变是由磁场（MF）、电场（EF）还是两者共同诱导产生的。为探究这个问题，我们制造了一种新的电场暴露装置。在将中国仓鼠卵巢（CHO）细胞暴露于电场（10 V/m，60 Hz）10小时后，我们观察到HPRT基因突变增加。电场暴露导致的突变频率约为假暴露的2倍。我们的数据表明，细胞暴露于400 mT可变磁场所诱导的突变，可能部分归因于感应电场。
