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暴露于电场导致次黄嘌呤 - 鸟嘌呤磷酸核糖转移酶基因突变增加。

Increase in hypoxanthine-guanine phosphoribosyl transferase gene mutations by exposure to electric field.

作者信息

Ding G R, Wake K, Taki M, Miyakoshi J

机构信息

Department of Radiation Medicine, The Fourth Military Medical University, Xi'an, China.

出版信息

Life Sci. 2001 Jan 19;68(9):1041-6. doi: 10.1016/s0024-3205(00)01007-9.

Abstract

Previously, we reported that exposure to extremely low frequency magnetic field (400 mT) increased in hypoxanthine-guanine phosphoribosyl transferase (HPRT) gene mutations. However, it is unclear these mutations were induced by magnetic field (MF), electric field (EF), or both. To explore this question, a new exposure apparatus for EF was manufactured. We observed an increase in HPRT gene mutations in Chinese hamster ovary (CHO) cells after exposure to EF (10 V/m, 60 Hz) for 10 h. The mutant frequency by EF-exposure was an approximate 2-fold of that by sham-exposure. Our data suggest that the mutations induced by exposure of cells to the variable magnetic field at 400 mT may be, in part, due to the induced EF.

摘要

此前,我们报道过暴露于极低频磁场(400 mT)会增加次黄嘌呤 - 鸟嘌呤磷酸核糖转移酶(HPRT)基因突变。然而,尚不清楚这些突变是由磁场(MF)、电场(EF)还是两者共同诱导产生的。为探究这个问题,我们制造了一种新的电场暴露装置。在将中国仓鼠卵巢(CHO)细胞暴露于电场(10 V/m,60 Hz)10小时后,我们观察到HPRT基因突变增加。电场暴露导致的突变频率约为假暴露的2倍。我们的数据表明,细胞暴露于400 mT可变磁场所诱导的突变,可能部分归因于感应电场。

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