Vral A, Thierens H, Bryant P, De Ridder L
Department of Anatomy, Embryology, Histology and Medical Physics, Ghent University, Belgium.
Int J Radiat Biol. 2001 Mar;77(3):329-39. doi: 10.1080/0955300001004237.
To elaborate the B-cell micronucleus (MN) response in the low-dose region in detail and to investigate the postulated deficiency in DNA-PK in B-cells.
Lymphocytes of five healthy volunteers were irradiated with low LET gamma-rays and high LET fast neutrons with doses ranging between 0.01 and 2 Gy. After post-irradiation incubation, B- and T-cells were isolated via CD3 and CD19 immunomagnetic microbeads. MN were analysed in both subpopulations. To study the underlying mechanism of chromosomal radiosensitivity, cell extracts prepared from purified B- and T-cells were subjected to SDS-electrophoresis and electroblotting using antibodies directed against the DNA-PK repair enzymes Ku70/86 and DNA-PKcs. Activity measurements were performed using the SignaTECT DNA-dependent protein kinase assay. DNA double-strand break (DSB) induction and rejoining was determined using constant-field gel electrophoresis.
For low LET gamma-rays a higher MN yield was observed in B-cells than in T-cells, but only in those samples exposed to doses < 1 Gy. For 1 Gy, the MN yields were comparable and for 2Gy even lower in B-cells compared with T-cells. After high LET neutron irradiation no significant differences in MN yields were observed between both subsets. The results of the DNA-PK experiments demonstrate that there is no difference between T- and B-cells in the basal expression and activity of DNA-PK repair proteins. No differences in DNA DSB induction and rejoining were found between T- and B-cells using constant-field gel electrophoresis.
From the results, it was concluded that the enhanced chromosomal radiosensitivity in B-cells is restricted to low doses (<1 Gy) of low LET radiation and that the chromosomal behaviour of B-cells to low LET radiation cannot be attributed to aberrant forms of the DNA-PK components. A type of chromosomal induced radioresistance (IRR) may be a possible explanation for the observed effect.
详细阐述低剂量区域B细胞微核核(详细阐述低剂量区域B细胞微核(MN)反应,并研究B细胞中DNA-PK假定的缺陷。
对五名健康志愿者的淋巴细胞进行低传能线密度γ射线和高传能线密度快中子照射,剂量范围为0.01至2 Gy。照射后孵育后,通过CD3和CD19免疫磁珠分离B细胞和T细胞。在两个亚群中分析微核。为了研究染色体放射敏感性的潜在机制,使用针对DNA-PK修复酶Ku70/86和DNA-PKcs的抗体,对从纯化的B细胞和T细胞制备的细胞提取物进行SDS电泳和电印迹。使用SignaTECT DNA依赖性蛋白激酶测定法进行活性测量。使用恒场凝胶电泳测定DNA双链断裂(DSB)的诱导和重新连接。
对于低传能线密度γ射线,在B细胞中观察到的微核产率高于T细胞,但仅在那些接受剂量<1 Gy的样品中。对于1 Gy,微核产率相当,对于2 Gy,与T细胞相比,B细胞中的微核产率甚至更低。在高传能线密度中子照射后,两个亚群之间未观察到微核产率的显著差异。DNA-PK实验结果表明,DNA-PK修复蛋白的基础表达和活性在T细胞和B细胞之间没有差异。使用恒场凝胶电泳在T细胞和B细胞之间未发现DNA DSB诱导和重新连接的差异。
从结果得出结论,B细胞中增强的染色体放射敏感性仅限于低传能线密度辐射的低剂量(<1 Gy),并且B细胞对低传能线密度辐射的染色体行为不能归因于DNA-PK成分的异常形式。一种染色体诱导的辐射抗性(IRR)可能是观察到的效应的一种可能解释。