Haude D, Morgenstern M, Meinel I, Wiesendanger R
Institute of Applied Physics, Hamburg University, Jungiusstrasse 11, D-20355 Hamburg, Germany.
Phys Rev Lett. 2001 Feb 19;86(8):1582-5. doi: 10.1103/PhysRevLett.86.1582.
The electronic structure of the narrow gap semiconductor InAs is investigated by scanning tunneling spectroscopy and magnetotransport measurements in the extreme quantum limit. The well-known oscillations of the Hall coefficient are reproduced and the last, most pronounced oscillation is shown to be correlated with the appearance of corrugations in the local density of states. While the increasing part of the Hall constant corresponds to the existence of isolated patterns indicating magnetic field induced localization, the decreasing part correlates with the development of a network which most likely consists of one-dimensional channels. We conclude that the decrease of the Hall constant in the extreme quantum limit is caused by a transition from a purely three-dimensional to a partly one-dimensional transport regime.
通过扫描隧道光谱和极端量子极限下的磁输运测量，研究了窄带隙半导体砷化铟的电子结构。重现了著名的霍尔系数振荡，并且表明最后一个最明显的振荡与局域态密度中波纹的出现相关。霍尔常数增加的部分对应于表明磁场诱导局域化的孤立图案的存在，而减小的部分与最有可能由一维通道组成的网络的发展相关。我们得出结论，极端量子极限下霍尔常数的减小是由从纯三维到部分一维输运 regime 的转变引起的。
