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健康男性中顶点体感诱发电位和听觉诱发电位P50的门控及其与皮肤电导率定向反应的相关性。

Gating of the vertex somatosensory and auditory evoked potential P50 and the correlation to skin conductance orienting response in healthy men.

作者信息

Arnfred S M, Eder D N, Hemmingsen R P, Glenthøj B Y, Chen A C

机构信息

Department of Psychiatry, University Hospital of Copenhagen, Bispebjerg, Bispebjerg Blake 23, DK-2400, København NV, Denmark.

出版信息

Psychiatry Res. 2001 Apr 15;101(3):221-35. doi: 10.1016/s0165-1781(01)00226-8.

DOI:10.1016/s0165-1781(01)00226-8
PMID:11311925
Abstract

A defect in auditory evoked potential (AEP) P50 gating supports the theory of information-processing deficits in schizophrenia. The relationship between gating of the mid-latency evoked potentials (EP) in the somatosensory and the auditory modalities has not been studied together before. In schizophrenia, we might expect the processing deficits to act on multiple modalities. We have examined the gating of median nerve somatosensory EP (SEP) following paired stimulation identical to the AEP P50 gating paradigm using interstimulus intervals (ISI) of 500, 750 and 1000 ms and the correlation of gating to the skin conductance orienting response (SCOR) in 20 healthy men. We measured mid-latency vertex components (SEP: P50, N65, P85 and N100; AEP: P30, N45, P50 and N80). The gating was most pronounced at ISI 500 ms where the SEP P50 and N100 gating were 0.59 and 0.37, respectively, as compared to a gating of 0.61 in P30, 0.33 in P50 and 0.45 in N80 in the AEP. Repetition effects in the two modalities were not correlated. AEP P50 gating was correlated to skin conductance level (SCL). The combination of recording repetition effects on the mid-latency EP in two modalities could provide a method for investigating if deficits of information processing in schizophrenia are cross-modal.

摘要

听觉诱发电位(AEP)P50门控缺陷支持精神分裂症信息处理缺陷的理论。体感和听觉模态中潜伏期诱发电位(EP)的门控之间的关系此前尚未一起研究过。在精神分裂症中,我们可能预期处理缺陷会作用于多种模态。我们使用500、750和1000毫秒的刺激间隔(ISI),按照与AEP P50门控范式相同的方式,对20名健康男性进行配对刺激后,检查了正中神经体感EP(SEP)的门控,并研究了门控与皮肤电导定向反应(SCOR)的相关性。我们测量了中潜伏期顶点成分(SEP:P50、N65、P85和N100;AEP:P30、N45、P50和N80)。门控在ISI 500毫秒时最为明显,此时SEP的P50和N100门控分别为0.59和0.37,而AEP中P30的门控为0.61、P50的门控为0.33、N80的门控为0.45。两种模态中的重复效应不相关。AEP P50门控与皮肤电导水平(SCL)相关。记录两种模态中潜伏期EP上的重复效应的组合,可以提供一种方法来研究精神分裂症中信息处理缺陷是否是跨模态的。

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