Ghaisas S V
Department of Electronic Science, University of Pune, Pune 411007, India.
Phys Rev E Stat Nonlin Soft Matter Phys. 2001 Jun;63(6 Pt 1):062601. doi: 10.1103/PhysRevE.63.062601. Epub 2001 May 23.
A (2+1)-dimensional stochastic growth model is proposed in order to understand various experimental observations at low temperature growth. The model includes step attached adatom hopping in the upward direction to provide a source of additional particle current. The flexibility obtained due to additional current control allows one to express most of the experimental observations within the framework of this model. It is argued that the time evolution exponent beta for surface roughness is >0.5 only if upward hops are included. Simulations using this model are shown to be qualitatively consistent with the observations for homoepitaxial growth on Cu(100) and Ge(100) at different temperatures.
为了理解低温生长下的各种实验观测结果，提出了一个(2 + 1)维随机生长模型。该模型包括台阶附着的吸附原子向上跳跃，以提供额外的粒子流来源。由于额外的电流控制而获得的灵活性使得人们能够在该模型的框架内表达大多数实验观测结果。有人认为，只有当包括向上跳跃时，表面粗糙度的时间演化指数β才大于0.5。使用该模型的模拟结果在定性上与不同温度下Cu(100)和Ge(100)上同质外延生长的观测结果一致。
