Isomura Yoshikazu, Fujiwara-Tsukamoto Yoko, Imanishi Michiko, Nambu Atsushi, Takada Masahiko
Department of System Neuroscience, Tokyo Metropolitan Institute for Neuroscience, 2-6 Musashidai, Fuchu, Tokyo 183-8526, Japan.
J Neurophysiol. 2002 Feb;87(2):1169-74. doi: 10.1152/jn.00536.2001.
Low concentration of Ni(2+), a T- and R-type voltage-dependent calcium channel (VDCC) blocker, is known to inhibit the induction of long-term potentiation (LTP) in the hippocampal CA1 pyramidal cells. These VDCCs are distributed more abundantly at the distal area of the apical dendrite than at the proximal dendritic area or soma. Therefore we investigated the relationship between the Ni(2+)-sensitivity of LTP induction and the synaptic location along the apical dendrite. Field potential recordings revealed that 25 microM Ni(2+) hardly influenced LTP at the proximal dendritic area (50 microM distant from the somata). In contrast, the same concentration of Ni(2+) inhibited the LTP induction mildly at the middle dendritic area (150 microM) and strongly at the distal dendritic area (250 microM). Ni(2+) did not significantly affect either the synaptic transmission at the distal dendrite or the burst-firing ability at the soma. However, synaptically evoked population spikes recorded near the somata were slightly reduced by Ni(2+) application, probably owing to occlusion of dendritic excitatory postsynaptic potential (EPSP) amplification. Even when the stimulating intensity was strengthened sufficiently to overcome such a reduction in spike generation during LTP induction, the magnitude of distal LTP was not significantly recovered from the Ni(2+)-dependent inhibition. These results suggest that Ni(2+) may inhibit the induction of distal LTP directly by blocking calcium influx through T- and/or R-type VDCCs. The differentially distributed calcium channels may play a critical role in the induction of LTP at dendritic synapses of the hippocampal pyramidal cells.
低浓度的镍离子(Ni(2+))是一种T型和R型电压依赖性钙通道(VDCC)阻滞剂,已知其可抑制海马CA1锥体神经元中长时程增强(LTP)的诱导。这些VDCC在顶树突远端区域的分布比在近端树突区域或胞体更为丰富。因此,我们研究了LTP诱导的镍离子敏感性与沿顶树突的突触位置之间的关系。场电位记录显示,25微摩尔的镍离子对近端树突区域(距胞体50微米)的LTP几乎没有影响。相比之下,相同浓度的镍离子在中间树突区域(150微米)轻度抑制LTP诱导,而在远端树突区域(250微米)则强烈抑制。镍离子对远端树突的突触传递或胞体的爆发式放电能力均无显著影响。然而,在胞体附近记录的突触诱发群体锋电位在应用镍离子后略有降低,这可能是由于树突兴奋性突触后电位(EPSP)放大的阻断所致。即使在LTP诱导期间充分增强刺激强度以克服这种锋电位产生的降低,远端LTP的幅度也未从镍离子依赖性抑制中显著恢复。这些结果表明镍离子可能通过阻断通过T型和/或R型VDCC的钙内流直接抑制远端LTP的诱导。分布不同的钙通道可能在海马锥体神经元树突突触处LTP的诱导中起关键作用。