Brázdil Milan, Roman Robert, Falkenstein Michael, Daniel Pavel, Jurák Pavel, Rektor Ivan
First Department of Neurology, Masaryk University, 65691 Brno, Czech Republic.
Exp Brain Res. 2002 Oct;146(4):460-6. doi: 10.1007/s00221-002-1201-y. Epub 2002 Sep 10.
Over the last decade, several authors have described an early negative (Ne) and a later positive (Pe) potential in scalp event-related potentials (ERPs) of incorrect choice reactions. The aim of the present study was to investigate the intracerebral origin and distribution of these potentials. Seven intractable epileptic patients participated in the study. A total of 231 sites in the frontal, temporal, and parietal lobes were investigated by means of depth electrodes. A standard visual oddball paradigm was performed, and electroencephalogram (EEG) epochs with correct and incorrect motor reactions were averaged independently. Prominent, mostly biphasic, ERP complexes resembling scalp Ne/Pe potentials were consistently observed in several cortical locations after incorrect trials. The most consistent findings were obtained from mesiotemporal structures; in addition to P3-like activity found after correct responses, an Ne/Pe complex was generally detected after incorrect trials. The Pe had a longer latency than the P3. Other generators of Ne/Pe-like potentials were located in different regions of the frontal lobe. The latency of the Ne was shortest in parietal, longer in temporal, and longest in frontal regions. Our findings firstly show that multiple cortical structures generate Ne and Pe. In addition to the rostral anterior cingulate cortex, the mesiotemporal and some prefrontal cortical sites seem to represent integral components of the brain's error-checking system. Secondly, the coupling of Ne and Pe to a complex suggests a common origin of Ne and Pe. Thirdly, the latency differences of the Ne across lobes suggest that the Ne is primarily elicited in posterior and temporal, and only later in frontal regions.
在过去十年中，几位作者描述了在错误选择反应的头皮事件相关电位（ERP）中存在早期负向电位（Ne）和后期正向电位（Pe）。本研究的目的是探究这些电位的脑内起源和分布。七名顽固性癫痫患者参与了该研究。通过深度电极对额叶、颞叶和顶叶的总共231个部位进行了研究。采用标准的视觉oddball范式，对具有正确和错误运动反应的脑电图（EEG）时段分别进行平均。在错误试验后，在几个皮质部位始终观察到突出的、大多为双相的ERP复合波，类似于头皮Ne/Pe电位。最一致的发现来自颞叶内侧结构；除了正确反应后出现的类似P3的活动外，错误试验后通常还能检测到Ne/Pe复合波。Pe的潜伏期比P3长。Ne/Pe样电位的其他产生源位于额叶的不同区域。Ne的潜伏期在顶叶最短，在颞叶较长，在额叶最长。我们的研究结果首先表明，多个皮质结构产生Ne和Pe。除了喙前扣带回皮质外，颞叶内侧和一些前额叶皮质部位似乎是大脑错误检查系统的组成部分。其次，Ne和Pe与一个复合波的耦合表明Ne和Pe有共同的起源。第三，Ne在各脑叶间的潜伏期差异表明，Ne主要在后脑和颞叶诱发，随后才在额叶区域诱发。
