Magistretti Jacopo, Alonso Angel
Department of Neurology and Neurosurgery, McGill University and Montreal Neurological Institute, Montréal, Québec H3A 2B4, Canada.
J Gen Physiol. 2002 Dec;120(6):855-73. doi: 10.1085/jgp.20028676.
The gating properties of channels responsible for the generation of persistent Na(+) current (I(NaP)) in entorhinal cortex layer II principal neurons were investigated by performing cell-attached, patch-clamp experiments in acutely isolated cells. Voltage-gated Na(+)-channel activity was routinely elicited by applying 500-ms depolarizing test pulses positive to -60 mV from a holding potential of -100 mV. The channel activity underlying I(NaP) consisted of prolonged and frequently delayed bursts during which repetitive openings were separated by short closings. The mean duration of openings within bursts was strongly voltage dependent, and increased by e times per every approximately 12 mV of depolarization. On the other hand, intraburst closed times showed no major voltage dependence. The mean duration of burst events was also relatively voltage insensitive. The analysis of burst-duration frequency distribution returned two major, relatively voltage-independent time constants of approximately 28 and approximately 190 ms. The probability of burst openings to occur also appeared largely voltage independent. Because of the above "persistent" Na(+)-channel properties, the voltage dependence of the conductance underlying whole-cell I(NaP) turned out to be largely the consequence of the pronounced voltage dependence of intraburst open times. On the other hand, some kinetic properties of the macroscopic I(NaP), and in particular the fast and intermediate I(NaP)-decay components observed during step depolarizations, were found to largely reflect mean burst duration of the underlying channel openings. A further I(NaP) decay process, namely slow inactivation, was paralleled instead by a progressive increase of interburst closed times during the application of long-lasting (i.e., 20 s) depolarizing pulses. In addition, long-lasting depolarizations also promoted a channel gating modality characterized by shorter burst durations than normally seen using 500-ms test pulses, with a predominant burst-duration time constant of approximately 5-6 ms. The above data, therefore, provide a detailed picture of the single-channel bases of I(NaP) voltage-dependent and kinetic properties in entorhinal cortex layer II neurons.
通过对急性分离的内嗅皮层II层主要神经元进行细胞贴附式膜片钳实验,研究了负责产生持续性钠电流(I(NaP))的通道的门控特性。电压门控钠通道活性通常通过从-100 mV的钳制电位施加500 ms、向-60 mV正向去极化的测试脉冲来诱发。I(NaP)背后的通道活性由延长且频繁延迟的爆发组成,在此期间,重复开放被短暂关闭隔开。爆发内开放的平均持续时间强烈依赖电压,每去极化约12 mV增加e倍。另一方面,爆发内关闭时间没有明显的电压依赖性。爆发事件的平均持续时间也相对不依赖电压。对爆发持续时间频率分布的分析得出两个主要的、相对不依赖电压的时间常数,分别约为28 ms和约190 ms。爆发开放发生的概率似乎也很大程度上不依赖电压。由于上述“持续性”钠通道特性,全细胞I(NaP)背后电导的电压依赖性结果在很大程度上是爆发内开放时间明显的电压依赖性的结果。另一方面,宏观I(NaP)的一些动力学特性,特别是在阶跃去极化期间观察到的快速和中间I(NaP)衰减成分,被发现很大程度上反映了基础通道开放的平均爆发持续时间。另一个I(NaP)衰减过程,即缓慢失活,相反地伴随着在施加持久(即20 s)去极化脉冲期间爆发间关闭时间的逐渐增加。此外,持久去极化还促进了一种通道门控模式,其特征是爆发持续时间比使用500 ms测试脉冲时通常看到的更短,主要爆发持续时间常数约为5 - 6 ms。因此,上述数据提供了内嗅皮层II层神经元中I(NaP)电压依赖性和动力学特性的单通道基础详细情况。