（001） GaAs 衬底上外延铁薄膜中各向异性应变弛豫与单轴界面磁各向异性之间的相互作用
Interplay between anisotropic strain relaxation and uniaxial interface magnetic anisotropy in epitaxial Fe films on (001) GaAs.
作者信息
Thomas O, Shen Q, Schieffer P, Tournerie N, Lépine B
机构信息
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA.
出版信息
Phys Rev Lett. 2003 Jan 10;90(1):017205. doi: 10.1103/PhysRevLett.90.017205. Epub 2003 Jan 9.
Grazing incidence x-ray diffraction study of Fe epitaxial ultrathin films (1.5-13 nm) on GaAs (001) reveals an anisotropy of both domain shape and strain, with [110] and [1-10] as the principal directions. It is shown that the observed thickness-dependent strain anisotropy, together with a uniaxial interface term, can provide an unambiguous explanation to the usual in-plane magnetic anisotropy and its thickness dependence observed in this magnetic thin-film system.
对生长在 GaAs(001) 上的 Fe 外延超薄膜（1.5 - 13 纳米）进行掠入射 X 射线衍射研究，结果表明畴形状和应变均存在各向异性，其主方向为 [110] 和 [1 - 10]。研究表明，所观察到的与厚度相关的应变各向异性，连同单轴界面项，能够对该磁性薄膜系统中常见的面内磁各向异性及其厚度依赖性给出明确解释。
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