Aoki Kanna, Miyazaki Hideki T, Hirayama Hideki, Inoshita Kyoji, Baba Toshihiko, Sakoda Kazuaki, Shinya Norio, Aoyagi Yoshinobu
Semiconductors Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
Nat Mater. 2003 Feb;2(2):117-21. doi: 10.1038/nmat802.
Electronic devices and their highly integrated components formed from semiconductor crystals contain complex three-dimensional (3D) arrangements of elements and wiring. Photonic crystals, being analogous to semiconductor crystals, are expected to require a 3D structure to form successful optoelectronic devices. Here, we report a novel fabrication technology for a semiconductor 3D photonic crystal by uniting integrated circuit processing technology with micromanipulation. Four- to twenty-layered (five periods) crystals, including one with a controlled defect, for infrared wavelengths of 3-4.5 microm, were integrated at predetermined positions on a chip (structural error <50 nm). Numerical calculations revealed that a transmission peak observed at the upper frequency edge of the bandgap originated from the excitation of a resonant guided mode in the defective layers. Despite their importance, detailed discussions on the defective modes of 3D photonic crystals for such short wavelengths have not been reported before. This technology offers great potential for the production of optical wavelength photonic crystal devices.
由半导体晶体构成的电子设备及其高度集成的组件包含元素和布线的复杂三维（3D）排列。光子晶体类似于半导体晶体，预计需要三维结构才能形成成功的光电器件。在此，我们报告了一种通过将集成电路处理技术与微操作相结合来制造半导体3D光子晶体的新颖技术。针对3至4.5微米的红外波长，在芯片上的预定位置集成了四至二十层（五个周期）的晶体，其中包括一个具有可控缺陷的晶体（结构误差<50纳米）。数值计算表明，在带隙的高频边缘观察到的传输峰源自缺陷层中共振导模的激发。尽管其很重要，但此前尚未有关于此类短波长三维光子晶体缺陷模式的详细讨论报道。该技术为生产光波长光子晶体器件提供了巨大潜力。
