Qian Dali, Andrews Rodney, Jacques David, Kichambare Padmakar, Lian Guoda, Dickey Elizabeth C
Center for Applied Energy Research, University of Kentucky, Lexington, Kentucky, USA.
J Nanosci Nanotechnol. 2003 Feb-Apr;3(1-2):93-7. doi: 10.1166/jnn.2003.159.
Well-aligned nitrogen-doped multiwall carbon nanotube arrays have been successfully grown over large areas on quartz and silicon wafers by floating-catalyst chemical vapor deposition at low temperatures (600 degrees C). These nitrogen-including nanotubes, derived from pyridine-ferrocene mixtures, have smaller outer diameters but larger inner diameters compared with carbon nanotubes grown from a xylene-ferrocene mixture under similar conditions. The N-doped nanotubes exhibit bamboo-like structures in the core. Elemental analysis and electron energy loss spectroscopy analysis show that the as-prepared nanotubes contain as much as 2.62 wt.% N, with most of the N concentrated in the inner few shells of the nanotube. Such large-scale arrays of well-aligned N-doped nanotubes on silicon wafers have a current density as high as 23.8 mA/cm2 at an applied electric field of 17 V/micron, which can be further improved by patterning the tubes and coating the silicon substrate with a conductive thin metal film for the fabrication of flat panel displays.
通过低温（600摄氏度）浮动催化剂化学气相沉积法，已成功在大面积的石英和硅片上生长出排列整齐的氮掺杂多壁碳纳米管阵列。这些由吡啶 - 二茂铁混合物衍生而来的含氮纳米管，与在类似条件下由二甲苯 - 二茂铁混合物生长的碳纳米管相比，外径更小但内径更大。氮掺杂纳米管的核心呈现出竹节状结构。元素分析和电子能量损失光谱分析表明，所制备的纳米管含有高达2.62 wt.%的氮，大部分氮集中在纳米管内部的几层壳中。这种在硅片上排列整齐的大规模氮掺杂纳米管阵列，在17 V/微米的外加电场下，电流密度高达23.8 mA/cm²，通过对纳米管进行图案化处理以及用导电金属薄膜涂覆硅基板来制造平板显示器，其性能还可进一步提高。
