锗量子点及对称应变硅/锗超晶格的各向异性热导率

Anisotropic thermal conductivity of Ge quantum-dot and symmetrically strained Si/Ge superlattices.

作者信息

Liu W L, Borca-Tasciuc T, Chen G, Liu J L, Wang K L

机构信息

Nanoscale Heat Transfer and Thermoelectrics Laboratory, Mechanical and Aerospace Engineering Department, University of California, Los Angeles, California 90095, USA.

出版信息

J Nanosci Nanotechnol. 2001 Mar;1(1):39-42. doi: 10.1166/jnn.2001.013.

DOI:10.1166/jnn.2001.013

PMID:12914029

Abstract

We report the first experimental results on the temperature dependent in-plane and cross-plane thermal conductivities of a symmetrically strained Si/Ge superlattice and a Ge quantum-dot superlattice measured by the two-wire 3 omega method. The measured thermal conductivity values are highly anisotropic and are significantly reduced compared to the bulk thermal conductivity of the structures. The results can be explained by using heat transport models based on the Boltzmann transport equation with partially diffusive scattering of the phonons at the superlattice interfaces.

摘要

我们报告了通过双线三ω法测量的对称应变Si/Ge超晶格和Ge量子点超晶格的面内和面外热导率随温度变化的首个实验结果。测量得到的热导率值具有高度各向异性，并且与结构的体热导率相比显著降低。这些结果可以通过基于玻尔兹曼输运方程的热输运模型来解释，其中声子在超晶格界面处存在部分扩散散射。