Hirasawa M, Seto T, Aya N
Research Center for Advanced Manufacturing on Nanoscale Science and Engineering, National Institute of Advanced Industrial Science and Technology, Namiki 1-2-1, Tsukuba, Ibaraki 305-8564, Japan.
J Nanosci Nanotechnol. 2001 Dec;1(4):381-3. doi: 10.1166/jnn.2001.057.
Size and crystallinity controlled silicon nanoparticles were prepared by a laser ablation, in situ annealing and mobility size-selection with a differential mobility analyzer (DMA). The shape and crystal structure of generated particles were observed by a transmission electron microscopy (TEM). Both densification of agglomerates and crystal growth of the particles were observed. The size of silicon primary particle was increased by the annealing, and the uniformity of the particle classified at 10 nm was improved as a result.
通过激光烧蚀、原位退火以及使用差分迁移率分析仪（DMA）进行迁移率尺寸选择，制备了尺寸和结晶度可控的硅纳米颗粒。通过透射电子显微镜（TEM）观察生成颗粒的形状和晶体结构。观察到团聚体的致密化和颗粒的晶体生长。退火使硅初级颗粒的尺寸增加，结果10nm分级颗粒的均匀性得到改善。
