Shinozaki Akihito, Arima Kenta, Morita Mizuho, Kojima Isao, Azuma Yasushi
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita, Osaka 565-0871, Japan.
Anal Sci. 2003 Nov;19(11):1557-9. doi: 10.2116/analsci.19.1557.
The effectiveness of cleaning organic contaminants from silicon dioxide (SiO2) surfaces was studied by conducting highly sensitive measurements using Fourier Transform Infrared Attenuated Total reflectance (FTIR-ATR) with a Si prism as the waveguide. To serve as an example, the surface of the prism was oxidized to an order of a few nanometers. The oxidized Si surface film was allowed to stand in the atmosphere and then wet-cleaned in a repeated manner; subsequently its thickness was measured by ellipsometry. Although, various wet-cleaning methods were tested, they only showed values of 0.1-0.2 nm larger than, but not equal to, the original thickness immediately after oxidation. FTIR-ATR measurements of the spectral change after exposure to air revealed that organic species, such as C-CH3 and -(CH2)n-, increased with time. Wet-cleaning the sample failed to remove the C-CH3 species, which indicates that they corresponded to the film thickness increment from the original.
通过使用以硅棱镜作为波导的傅里叶变换红外衰减全反射（FTIR - ATR）进行高灵敏度测量，研究了从二氧化硅（SiO₂）表面清除有机污染物的效果。作为示例，将棱镜表面氧化至几纳米的量级。使氧化的硅表面膜在大气中放置，然后反复进行湿法清洗；随后通过椭偏仪测量其厚度。尽管测试了各种湿法清洗方法，但它们仅显示出比氧化后立即测量的原始厚度大0.1 - 0.2纳米的值，但并不相等。对暴露于空气中后的光谱变化进行的FTIR - ATR测量表明，诸如C - CH₃和 - (CH₂)n - 等有机物种随时间增加。对样品进行湿法清洗未能去除C - CH₃物种，这表明它们与相对于原始状态的膜厚度增加相对应。
