Brocke T, Bootsmann M-T, Tews M, Wunsch B, Pfannkuche D, Heyn Ch, Hansen W, Heitmann D, Schüller C
Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstrasse 11, D-20355 Hamburg, Germany.
Phys Rev Lett. 2003 Dec 19;91(25):257401. doi: 10.1103/PhysRevLett.91.257401. Epub 2003 Dec 15.
We report the investigation of electronic excitations in InGaAs self-assembled quantum dots using resonant inelastic light scattering. The dots can be charged via a gate by N=1, em leader,6 electrons. We observe excitations, which are identified as transitions of electrons, predominantly from the s to the p shell (s-p transitions) of the quasiatoms. We find that the s-p transition energy decreases and the observed band broadens, when the p shell is filled with 1 to 4 electrons. By a theoretical model, which takes into account the full Coulomb interaction in the few-electron artificial atom, we can confirm the experimental results to be an effect of the Coulomb interaction in the quantum dot.
我们报告了使用共振非弹性光散射对铟镓砷自组装量子点中的电子激发进行的研究。这些量子点可以通过栅极充电，充电量为N = 1、2、3、4、5、6个电子。我们观察到了激发，这些激发被确定为准原子中电子主要从s壳层到p壳层的跃迁（s-p跃迁）。我们发现，当p壳层填充1至4个电子时，s-p跃迁能量降低，观察到的能带变宽。通过一个考虑了少电子人工原子中完整库仑相互作用的理论模型，我们可以证实实验结果是量子点中库仑相互作用的一种效应。
