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流体膜中晶域的出芽。

Budding of crystalline domains in fluid membranes.

作者信息

Kohyama T, Kroll D M, Gompper G

机构信息

Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany.

出版信息

Phys Rev E Stat Nonlin Soft Matter Phys. 2003 Dec;68(6 Pt 1):061905. doi: 10.1103/PhysRevE.68.061905. Epub 2003 Dec 17.

Abstract

Crystalline domains embedded in fluid membrane vesicles are studied by Monte Carlo simulations of dynamically triangulated surfaces and by scaling arguments. A budding transition from a caplike state to a budded shape is observed for increasing spontaneous curvature C0 of the crystalline domain as well as increasing line tension lambda. The location of the budding transition is determined as a function of C0, lambda, and the radius R(A) of the crystalline domain. In contrast to previous theoretical predictions, it is found that budding occurs at a value of the spontaneous curvature C0, that is always a decreasing function of the domain size R(A). Several characteristic scaling regimes are predicted. The distribution of five- and sevenfold disclinations as the budding transition is approached is determined, and the dynamics of the generation of defects is studied.

摘要

通过动态三角化表面的蒙特卡罗模拟和标度论证,对嵌入流体膜泡中的晶态域进行了研究。随着晶态域自发曲率(C_0)的增加以及线张力(\lambda)的增加,观察到从帽状状态到芽状形状的出芽转变。出芽转变的位置是作为(C_0)、(\lambda)以及晶态域半径(R(A))的函数来确定的。与先前的理论预测相反,发现出芽发生在自发曲率(C_0)的值处,该值始终是域大小(R(A))的递减函数。预测了几种特征标度 regime。确定了接近出芽转变时五重和七重位错的分布,并研究了缺陷产生的动力学。

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