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共济失调毛细血管扩张症杂合子对电离辐射的细胞反应:错义突变携带者与截短突变携带者之间的差异。

Cellular responses to ionising radiation of AT heterozygotes: differences between missense and truncating mutation carriers.

作者信息

Fernet M, Moullan N, Lauge A, Stoppa-Lyonnet D, Hall J

机构信息

DNA Repair Group, International Agency for Research on Cancer, 150 cours Albert Thomas, 69372 Lyon cedex 08, France.

出版信息

Br J Cancer. 2004 Feb 23;90(4):866-73. doi: 10.1038/sj.bjc.6601549.

Abstract

It has been estimated that approximately 1% of the general population are ataxia telangiectasia (AT) mutated (ATM) heterozygotes. The ATM protein plays a central role in DNA-damage response pathways; however, the functional consequences of the presence of either heterozygous truncating or missense mutations on ATM expression and the ionising radiation (IR)-induced cellular phenotype remain to be fully determined. To investigate this relationship, the ATM mRNA and protein levels and several cellular end points were characterised in 14 AT heterozygote (AT het) lymphoblastoid cell lines, compared to normal and AT homozygote lines. The AT het cell lines displayed a wide range of IR-induced responses: despite lower average levels of ATM mRNA and protein expression compared to normal cells, 13 out of 14 were capable of phosphorylating the ATM substrates p53-ser15 and Chk2, leading to a normal cell cycle progression after irradiation. However, cell survival was lower than in the normal cell lines. The presence of a missense compared to a truncating mutation was associated with lower cell survival after exposure to 2 Gy irradiation (P=0.005), and a higher level of ATM mRNA expression (P=0.047). Our results underline the difficulty in establishing a reliable test for determining ATM heterozygosity.

摘要

据估计,普通人群中约1%为共济失调毛细血管扩张症(AT)突变(ATM)杂合子。ATM蛋白在DNA损伤反应途径中起核心作用;然而,ATM杂合性截短或错义突变对ATM表达以及电离辐射(IR)诱导的细胞表型的功能影响仍有待全面确定。为了研究这种关系,与正常细胞系和AT纯合子细胞系相比,对14个AT杂合子(AT het)淋巴母细胞系中的ATM mRNA和蛋白水平以及几个细胞终点进行了表征。AT het细胞系表现出广泛的IR诱导反应:尽管与正常细胞相比,ATM mRNA和蛋白表达的平均水平较低,但14个细胞系中有13个能够磷酸化ATM底物p53-ser15和Chk2,从而在照射后导致正常的细胞周期进程。然而,细胞存活率低于正常细胞系。与截短突变相比,错义突变的存在与暴露于2 Gy辐射后的细胞存活率较低(P = 0.005)以及较高水平的ATM mRNA表达(P = 0.047)相关。我们的结果强调了建立一种可靠的检测方法来确定ATM杂合性的困难。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6247/2410162/66626124e8c6/90-6601549f1.jpg

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