• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

交叉网络:用于互补金属氧化物半导体-分子电子学(CMOL)电路的高性能神经形态架构。

CrossNets: high-performance neuromorphic architectures for CMOL circuits.

作者信息

Likharev Konstantin, Mayr Andreas, Muckra Ibrahim, Türel Ozgür

机构信息

Stony Brook University, Stony Brook, New York 11794, USA.

出版信息

Ann N Y Acad Sci. 2003 Dec;1006:146-63. doi: 10.1196/annals.1292.010.

DOI:10.1196/annals.1292.010
PMID:14976016
Abstract

The exponential, Moore's Law, progress of electronics may be continued beyond the 10-nm frontier if the currently dominant CMOS technology is replaced by hybrid CMOL circuits combining a silicon MOSFET stack and a few layers of parallel nanowires connected by self-assembled molecular electronic devices. Such hybrids promise unparalleled performance for advanced information processing, but require special architectures to compensate for specific features of the molecular devices, including low voltage gain and possible high fraction of faulty components. Neuromorphic networks with their defect tolerance seem the most natural way to address these problems. Such circuits may be trained to perform advanced information processing including (at least) effective pattern recognition and classification. We are developing a family of distributed crossbar network (CrossNet) architectures that permit the combination of high connectivity neuromorphic circuits with high component density. Preliminary estimates show that this approach may eventually allow us to place a cortex-scale circuit with about 10(10) neurons and about 10(14) synapses on an approximately 10 x 10 cm(2) silicon wafer. Such systems may provide an average cell-to-cell latency of about 20 nsec and, thus, perform information processing and system training (possibly including self-evolution after initial training) at a speed that is approximately six orders of magnitude higher than in its biological prototype and at acceptable power dissipation.

摘要

如果用混合CMOL电路取代当前占主导地位的CMOS技术,电子学呈指数级发展的摩尔定律可能会在10纳米前沿之后继续下去。混合CMOL电路将硅MOSFET堆栈与通过自组装分子电子器件连接的几层平行纳米线结合在一起。这种混合电路有望为先进信息处理带来无与伦比的性能,但需要特殊架构来弥补分子器件的特定特性,包括低电压增益和可能较高比例的故障组件。具有容错能力的神经形态网络似乎是解决这些问题最自然的方式。这种电路可以经过训练来执行先进信息处理,包括(至少)有效的模式识别和分类。我们正在开发一系列分布式交叉开关网络(CrossNet)架构,这些架构允许高连接性神经形态电路与高组件密度相结合。初步估计表明,这种方法最终可能使我们能够在大约10×10平方厘米的硅片上放置一个具有约10¹⁰个神经元和约10¹⁴个突触的皮质规模电路。这样的系统可能提供约20纳秒的平均细胞间延迟,从而以比其生物原型快约六个数量级的速度进行信息处理和系统训练(可能包括初始训练后的自我进化),并且功耗可接受。

相似文献

1
CrossNets: high-performance neuromorphic architectures for CMOL circuits.交叉网络:用于互补金属氧化物半导体-分子电子学(CMOL)电路的高性能神经形态架构。
Ann N Y Acad Sci. 2003 Dec;1006:146-63. doi: 10.1196/annals.1292.010.
2
Issues of nanoelectronics: a possible roadmap.纳米电子学问题:一条可能的路线图。
J Nanosci Nanotechnol. 2002 Jun-Aug;2(3-4):235-66. doi: 10.1166/jnn.2002.115.
3
Training and operation of an integrated neuromorphic network based on metal-oxide memristors.基于金属氧化物忆阻器的集成神经形态网络的训练和操作。
Nature. 2015 May 7;521(7550):61-4. doi: 10.1038/nature14441.
4
Scaling-efficient in-situ training of CMOL CrossNet classifiers.大规模高效原位训练 CMOL CrossNet 分类器。
Neural Netw. 2011 Dec;24(10):1136-42. doi: 10.1016/j.neunet.2011.06.015. Epub 2011 Jul 1.
5
Linker-free directed assembly of high-performance integrated devices based on nanotubes and nanowires.基于纳米管和纳米线的无连接体高性能集成器件的直接组装
Nat Nanotechnol. 2006 Oct;1(1):66-71. doi: 10.1038/nnano.2006.46.
6
Integration of nanoscale memristor synapses in neuromorphic computing architectures.纳米级忆阻器突触在神经形态计算架构中的集成。
Nanotechnology. 2013 Sep 27;24(38):384010. doi: 10.1088/0957-4484/24/38/384010. Epub 2013 Sep 2.
7
Mimicking Biological Synaptic Functionality with an Indium Phosphide Synaptic Device on Silicon for Scalable Neuromorphic Computing.用硅上的磷化铟突触器件模拟生物突触功能,实现可扩展的神经形态计算。
ACS Nano. 2018 Feb 27;12(2):1656-1663. doi: 10.1021/acsnano.7b08272. Epub 2018 Jan 17.
8
Scalability simulations for nanomemory systems integrated on the molecular scale.
Ann N Y Acad Sci. 2003 Dec;1006:312-30. doi: 10.1196/annals.1292.022.
9
A Hybrid CMOS-Memristor Neuromorphic Synapse.一种混合互补金属氧化物半导体-忆阻器神经形态突触。
IEEE Trans Biomed Circuits Syst. 2017 Apr;11(2):434-445. doi: 10.1109/TBCAS.2016.2618351. Epub 2016 Dec 22.
10
Synthesis, electronic properties, and applications of indium oxide nanowires.氧化铟纳米线的合成、电子特性及应用
Ann N Y Acad Sci. 2003 Dec;1006:104-21. doi: 10.1196/annals.1292.007.

引用本文的文献

1
Mosaic: in-memory computing and routing for small-world spike-based neuromorphic systems.Mosaic:面向基于尖峰的小世界神经形态系统的内存计算与路由
Nat Commun. 2024 Jan 2;15(1):142. doi: 10.1038/s41467-023-44365-x.
2
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems.一种能够在神经形态系统中进行通信和随机学习的双晶体管/单电阻人工突触。
Front Neurosci. 2015 Jan 15;8:438. doi: 10.3389/fnins.2014.00438. eCollection 2014.
3
Memristive devices for computing.忆阻器计算设备。
Nat Nanotechnol. 2013 Jan;8(1):13-24. doi: 10.1038/nnano.2012.240.
4
Neuromorphic atomic switch networks.神经形态原子开关网络。
PLoS One. 2012;7(8):e42772. doi: 10.1371/journal.pone.0042772. Epub 2012 Aug 6.
5
Four-dimensional address topology for circuits with stacked multilayer crossbar arrays.堆叠多层交叉阵列电路的四维地址拓扑结构。
Proc Natl Acad Sci U S A. 2009 Dec 1;106(48):20155-8. doi: 10.1073/pnas.0906949106. Epub 2009 Nov 16.
6
A hybrid nanomemristor/transistor logic circuit capable of self-programming.一种能够自我编程的混合纳米忆阻器/晶体管逻辑电路。
Proc Natl Acad Sci U S A. 2009 Feb 10;106(6):1699-703. doi: 10.1073/pnas.0806642106. Epub 2009 Jan 26.