Manyala Ncholu, Sidis Yvan, DiTusa John F, Aeppli Gabriel, Young David P, Fisk Zachary
Department of Physics and Astronomy, Louisiana State University, Baton Rouge Louisiana 70803, USA.
Nat Mater. 2004 Apr;3(4):255-62. doi: 10.1038/nmat1103. Epub 2004 Mar 21.
Magnetic semiconductors are attracting great interest because of their potential use for spintronics, a new technology that merges electronics with the manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the most popular materials for this new technology, and although their Curie temperatures are rising towards room temperature, these materials can only be fabricated in thin-film form, are heavily defective, and are not obviously compatible with Si. We show here that it is productive to consider transition metal monosilicides as potential alternatives. In particular, we report the discovery that the bulk metallic magnets derived from doping the narrow-gap insulator FeSi with Co share the very high anomalous Hall conductance of (GaMn)As, while displaying Curie temperatures as high as 53 K. Our work opens up a new arena for spintronics, involving a bulk material based only on transition metals and Si, which displays large magnetic-field effects on its electrical properties.
磁性半导体因其在自旋电子学中的潜在应用而备受关注，自旋电子学是一种将电子学与传导电子自旋操纵相结合的新技术。(GaMn)As和(GaMn)N最近已成为这项新技术最受欢迎的材料，尽管它们的居里温度正朝着室温上升，但这些材料只能制成薄膜形式，存在大量缺陷，并且与硅不太兼容。我们在此表明，将过渡金属单硅化物视为潜在替代品是有成效的。特别是，我们报告了一项发现，即通过用钴掺杂窄带隙绝缘体FeSi得到的体金属磁体具有与(GaMn)As非常高的反常霍尔电导，同时显示出高达53 K的居里温度。我们的工作为自旋电子学开辟了一个新领域，涉及一种仅基于过渡金属和硅的体材料，该材料在其电学性质上表现出大的磁场效应。
