Sambandamurthy G, Engel L W, Johansson A, Shahar D
Department of Condensed Matter Physics, The Weizmann Institute of Science, Rehovot 76100, Israel.
Phys Rev Lett. 2004 Mar 12;92(10):107005. doi: 10.1103/PhysRevLett.92.107005.
We present the results of an experimental study of superconducting, disordered, thin films of amorphous indium oxide. These films can be driven from the superconducting phase to a reentrant insulating state by the application of a perpendicular magnetic field (B). We find that the high-B insulator exhibits activated transport with a characteristic temperature, TI. TI has a maximum value (TpI) that is close to the superconducting transition temperature (Tc) at B=0, suggesting a possible relation between the conduction mechanisms in the superconducting and insulating phases. Tp(I) and Tc display opposite dependences on the disorder strength.
我们展示了对非晶氧化铟超导、无序薄膜进行实验研究的结果。通过施加垂直磁场（B），这些薄膜可以从超导相被驱动到再入绝缘态。我们发现，高磁场下的绝缘体呈现出具有特征温度TI的激活输运。TI有一个最大值（TpI），它在B = 0时接近超导转变温度（Tc），这表明超导相和绝缘相的传导机制之间可能存在关联。Tp(I)和Tc对无序强度呈现相反的依赖关系。
