Lin Zhu, Mei Chenguang, Wei Linlin, Sun Zhangao, Wu Shilong, Huang Haoliang, Zhang Shu, Liu Chang, Feng Yang, Tian Huanfang, Yang Huaixin, Li Jianqi, Wang Yayu, Zhang Guangming, Lu Yalin, Zhao Yonggang
Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China.
Collaborative Innovation Center of Quantum Matter, Beijing 100084, China.
Sci Rep. 2015 Sep 18;5:14133. doi: 10.1038/srep14133.
We report the structural and superconducting properties of FeSe0.3Te0.7 (FST) thin films with different thicknesses grown on ferroelectric Pb(Mg1/3Nb2/3)0.7Ti0.3O3 substrates. It was shown that the FST films undergo biaxial tensile strains which are fully relaxed for films with thicknesses above 200 nm. Electrical transport measurements reveal that the ultrathin films exhibit an insulating behavior and superconductivity appears for thicker films with Tc saturated above 200 nm. The current-voltage curves around the superconducting transition follow the Berezinskii-Kosterlitz-Thouless (BKT) transition behavior and the resistance-temperature curves can be described by the Halperin-Nelson relation, revealing quasi-two-dimensional phase fluctuation in FST thin films. The Ginzburg number decreases with increasing film thickness indicating the decrease of the strength of thermal fluctuations. Upon applying electric field to the heterostructure, Tc of FST thin film increases due to the reduction of the tensile strain in FST. This work sheds light on the superconductivity, strain effect as well as electric-field modulation of superconductivity in FST films.
我们报道了在铁电体Pb(Mg1/3Nb2/3)0.7Ti0.3O3衬底上生长的不同厚度的FeSe0.3Te0.7(FST)薄膜的结构和超导特性。结果表明,FST薄膜经历了双轴拉伸应变,对于厚度超过200nm的薄膜,该应变完全松弛。电输运测量表明,超薄薄膜表现出绝缘行为,而对于厚度大于200nm且Tc饱和的较厚薄膜则出现超导性。超导转变附近的电流-电压曲线遵循 Berezinskii-Kosterlitz-Thouless(BKT)转变行为,电阻-温度曲线可以用Halperin-Nelson关系描述,揭示了FST薄膜中的准二维相位波动。金兹堡数随薄膜厚度增加而减小,表明热涨落强度降低。在对异质结构施加电场时,FST薄膜的Tc由于FST中拉伸应变的减小而增加。这项工作揭示了FST薄膜中的超导性、应变效应以及超导性的电场调制。