Kato Y K, Myers R C, Gossard A C, Awschalom D D
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, CA 93106, USA.
Science. 2004 Dec 10;306(5703):1910-3. doi: 10.1126/science.1105514. Epub 2004 Nov 11.
Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.
利用克尔旋转显微镜检测并成像了半导体沟道边缘附近电诱导的电子自旋极化。这种极化是面外的，且在两个边缘具有相反的符号，这与自旋霍尔效应的预测一致。对未应变的砷化镓和应变的铟镓砷样品的测量表明，应变会在零磁场下改变自旋积累。对应变样品对晶体取向的微弱依赖性表明，其机制是外在自旋霍尔效应。
