Duval Fabrice F C, Dorey Robert A, Wright Robert W, Huang Zhaorong, Whatmore Roger W
School of Industrial and Manufacturing Science, Cranfield University, Bedfordshire, MK43 0AL, UK.
IEEE Trans Ultrason Ferroelectr Freq Control. 2004 Oct;51(10):1255-61. doi: 10.1109/tuffc.2004.1350953.
High-frequency, thickness mode resonators were fabricated using a 7 microm piezoelectric transducer (PZT) thick film that was produced using a modified composite ceramic sol-gel process. Initial studies dealt with the integration of the PZT thick film onto the substrate. Zirconium oxide (ZrO2) was selected as a diffusion barrier layer and gave good results when used in conjunction with silicon oxide (SiO2) as an etch stop layer. Using these conditions, devices were produced and the acoustic properties measured and modeled. The resonators showed a resonant frequency of about 200 MHz, an effective electromechanical coupling coefficient of 0.34, and a Q factor of 22. Modeling was based on a Mason-type model that gave good agreement between the experimental data and the simulations. The latter showed, for the PZT thick film, an electromechanical coupling coefficient of 0.35, a stiffness of 8.65 x 10(10) N x m(-2) and an e33,f piezoelectric coefficient of 9 C x m(-2).
高频厚度模式谐振器是使用一种7微米厚的压电换能器(PZT)厚膜制造的,该厚膜是通过改进的复合陶瓷溶胶 - 凝胶工艺生产的。初步研究涉及将PZT厚膜集成到衬底上。氧化锆(ZrO2)被选作扩散阻挡层,与氧化硅(SiO2)作为蚀刻停止层一起使用时效果良好。在这些条件下制造了器件,并对声学特性进行了测量和建模。这些谐振器的谐振频率约为200 MHz,有效机电耦合系数为0.34,品质因数为22。建模基于梅森型模型,该模型使实验数据与模拟结果之间具有良好的一致性。模拟结果表明,对于PZT厚膜,机电耦合系数为0.35,刚度为8.65×10(10)N×m(-2),e33,f压电系数为9 C×m(-2)。