Weekes Shemaiah M, Ogrin Feodor Y, Murray William A
School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom.
Langmuir. 2004 Dec 7;20(25):11208-12. doi: 10.1021/la048695v.
Nanosphere lithography (NSL) is a simple, cost-effective, and powerful technique capable of producing large-area arrays of ferromagnetic nanostructures with dimensions below 100 nm. These properties make NSL an attractive process for the fabrication of arrays of magnetic elements with applications in magnetic data storage. The main disadvantage with conventional NSL is that the monolayer of spheres always contains imperfections that are transferred to the resulting nanostructures. This can significantly affect the structural and magnetic properties of the fabricated array. In this paper we present a novel adaptation of NSL that reduces the effect of such defects on the resulting nanostructures. The technique also offers excellent control over the diameter, aspect ratio, and pitch of the fabricated elements. These properties are demonstrated through the fabrication of arrays of Ni elements of 210 nm diameter and arrays of Co elements with diameters between 200 and 320 nm.
纳米球光刻技术（NSL）是一种简单、经济高效且强大的技术，能够制造出尺寸小于100纳米的大面积铁磁纳米结构阵列。这些特性使NSL成为制造用于磁数据存储的磁性元件阵列的有吸引力的工艺。传统NSL的主要缺点是球体单层总是包含会转移到最终纳米结构中的缺陷。这会显著影响所制造阵列的结构和磁性。在本文中，我们提出了一种NSL的新颖改进方法，该方法可减少此类缺陷对最终纳米结构的影响。该技术还能出色地控制所制造元件的直径、纵横比和间距。通过制造直径为210纳米的镍元素阵列以及直径在200至320纳米之间的钴元素阵列，展示了这些特性。
