Departament de Física Fonamental, Universitat de Barcelona, Barcelona, Catalonia, Spain.
Nanotechnology. 2010 Apr 30;21(17):175301. doi: 10.1088/0957-4484/21/17/175301. Epub 2010 Apr 1.
The fabrication of ordered arrays of exchange biased Ni/FeF(2) nanostructures by focused ion beam lithography is reported. High quality nano-elements, with controlled removal depth and no significant re-deposition, were carved using small ion beam currents (30 pA), moderate dwell times (1 micros) and repeated passages over the same area. Two types of nanostructures were fabricated: square arrays of circular dots with diameters from 125 +/- 8 to 500 +/- 12 nm and periodicities ranging from 200 +/- 8 to 1000 +/- 12 nm, and square arrays of square antidots (207 +/- 8 nm in edge length) with periodicities ranging from 300 +/- 8 to 1200 +/- 12 nm. The arrays were characterized using scanning ion and electron microscopy, and atomic force microscopy. The effect of the patterning on the exchange bias field (i.e., the shift in the hysteresis loop of ferromagnetic Ni due to proximity to antiferromagnetic FeF(2)) was studied using magneto-transport measurements. These high quality nanostructures offer a unique method to address some of the open questions regarding the microscopic origin of exchange bias. This is not only of major relevance in the fabrication and miniaturization of magnetic devices but it is also one of the important proximity phenomena in nanoscience and materials science.
通过聚焦离子束光刻技术制备了具有交换偏置的有序 Ni/FeF(2) 纳米结构阵列。使用小离子束电流(30 pA)、适度的停留时间(1 微秒)和在同一区域重复多次,可以精确地刻蚀高质量的纳米元件,而不会有明显的再沉积和深度控制问题。制备了两种类型的纳米结构:直径为 125 ± 8 至 500 ± 12 nm、周期为 200 ± 8 至 1000 ± 12 nm 的圆形点正方形阵列,以及边长为 207 ± 8 nm、周期为 300 ± 8 至 1200 ± 12 nm 的正方形反点正方形阵列。使用扫描离子和电子显微镜以及原子力显微镜对这些阵列进行了表征。使用磁输运测量研究了图案化对交换偏置场(即由于与反铁磁 FeF(2) 接近而导致铁磁 Ni 磁滞回线的移动)的影响。这些高质量的纳米结构为解决有关交换偏置微观起源的一些开放性问题提供了一种独特的方法。这不仅对磁性器件的制造和小型化具有重要意义,而且也是纳米科学和材料科学中重要的邻近现象之一。