Song S P, Crimp M A, Ayres V M, Collard C J, Holloway J P, Brake M L
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824, USA.
J Nanosci Nanotechnol. 2004 Sep;4(7):817-23. doi: 10.1166/jnn.2004.093.
We report the formation of silicon and carbon hetero-nanostructures in an inductively coupled plasma system by a simultaneous growth/etching mechanism. Multi-walled carbon nanotubes were grown during one, three and five hour depositions, while tapered silicon nanowires were progressively etched. The carbon and silicon nanostructures and the interfaces between them were studied by electron microscopies and micro Raman spectroscopies. The potential of this method for large-scale controlled production of nano heterostructures without the requirement of a common catalyst is explored.
我们报道了在感应耦合等离子体系统中通过同时生长/蚀刻机制形成硅和碳异质纳米结构。在沉积1小时、3小时和5小时的过程中生长了多壁碳纳米管，而锥形硅纳米线则逐渐被蚀刻。通过电子显微镜和显微拉曼光谱对碳和硅纳米结构及其之间的界面进行了研究。探索了这种方法在无需通用催化剂的情况下大规模可控生产纳米异质结构的潜力。
