Xu Congkang, Chung Sangyong, Kim Misuk, Kim Dong Eon, Chon Bonghwan, Hong Sangsu, Joo Taiha
Department of Physics and Electron Spin Science Center, Pohang University of Science and Technology, Pohang 790-784, South Korea.
J Nanosci Nanotechnol. 2005 Apr;5(4):530-5. doi: 10.1166/jnn.2005.097.
Doping of Si into GaN nanowires has been successfully attained via thermal evaporation in the presence of a suitable gas atmosphere. Analysis indicated that the Si-doped GaN nanowire is a single crystal with a hexagonal wurtzite structure, containing 2.2 atom % of Si. The broadening and the shift of Raman peak to lower frequency are observed, which may be attributed to surface disorder and various strengths of the stress. The band-gap emission (358 nm) of Si-doped GaN nanowires relative to that (370 nm) of GaN nanowires has an apparent blue shift (approximately 12 nm), which can be ascribed to doping impurity Si.
通过在合适的气体气氛中进行热蒸发，已成功实现了硅对氮化镓纳米线的掺杂。分析表明，硅掺杂的氮化镓纳米线是具有六方纤锌矿结构的单晶，含有2.2原子百分比的硅。观察到拉曼峰变宽并向低频移动，这可能归因于表面无序和各种应力强度。相对于氮化镓纳米线的带隙发射（370纳米），硅掺杂的氮化镓纳米线的带隙发射（358纳米）有明显的蓝移（约12纳米），这可归因于掺杂杂质硅。
