层厚对ZnS/CdS/ZnS量子点量子阱发光特性的影响

Effect of layer thickness on the luminescence properties of ZnS/CdS/ZnS quantum dot quantum well.

作者信息

Cao Lixin, Huang Shihua, Lü Shaozhe, Lin Jiuling

机构信息

Institute of Materials Sciences and Engineering, Ocean University of China, Qingdao 266003, People's Republic of China.

出版信息

J Colloid Interface Sci. 2005 Apr 15;284(2):516-20. doi: 10.1016/j.jcis.2004.10.066.

DOI:10.1016/j.jcis.2004.10.066

PMID:15780290

Abstract

ZnS/CdS/ZnS quantum dot quantum well was prepared. The optical properties of ZnS/CdS/ZnS QDQW with different thickness of CdS well and ZnS shell were studied. Absorption spectra, emission spectra, and luminescence lifetimes were measured. The observed luminescence was assigned to the bulk donor-acceptor pair recombination of CdS and can be enhanced by increasing the thickness of the CdS well or coating an appropriate thickness of ZnS shell on the surface of the CdS well. The luminescence enhancement was caused by the relative reduce in the surface effect. The luminescence lifetimes were influenced strongly by the surface state.

摘要

制备了ZnS/CdS/ZnS量子点量子阱。研究了具有不同CdS阱厚度和ZnS壳层厚度的ZnS/CdS/ZnS量子点量子阱的光学性质。测量了吸收光谱、发射光谱和发光寿命。观察到的发光归因于CdS的体施主-受主对复合，并且可以通过增加CdS阱的厚度或在CdS阱表面包覆适当厚度的ZnS壳层来增强。发光增强是由表面效应的相对降低引起的。发光寿命受到表面态的强烈影响。