在反相胶束中制备的硫化锌/硫化镉/硫化锌量子点量子阱。
ZnS/CdS/ZnS quantum dot quantum well produced in inverted micelles.
作者信息
Cao Lixin, Huang Shihua, Shulin E
机构信息
Laboratory of Excited State Processes and Changchun Institute of Optical, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China.
出版信息
J Colloid Interface Sci. 2004 May 15;273(2):478-82. doi: 10.1016/j.jcis.2004.02.031.
A ZnS/CdS/ZnS quantum dot quantum well was prepared in AOT micelles successfully and was characterized by absorption spectroscopy and fluorescence spectroscopy. Luminescence in the region of 350-600 nm was observed. The complete ZnS shell might reduce the number of defects on the surface of the CdS well, which were assumed to act as centers for radiationless recombination, resulting in the luminescence enhancement.
成功地在AOT胶束中制备了ZnS/CdS/ZnS量子点量子阱，并通过吸收光谱和荧光光谱对其进行了表征。观察到350 - 600nm范围内的发光现象。完整的ZnS壳层可能会减少CdS阱表面的缺陷数量，这些缺陷被认为是无辐射复合的中心，从而导致发光增强。
Zotero 插件