Payne Marcia M, Parkin Sean R, Anthony John E, Kuo Chung-Chen, Jackson Thomas N
Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506-0055, USA.
J Am Chem Soc. 2005 Apr 13;127(14):4986-7. doi: 10.1021/ja042353u.
We present the device parameters for organic field-effect transistors fabricated from solution-deposited films of functionalized pentacene and anthradithiophenes. These materials are easily prepared in one or two steps from commercially available starting materials and are purified by simple recrystallization. For a solution-deposited film of functionalized pentacene, hole mobility of 0.17 cm2/V.s was measured. The functionalized anthradithiophenes showed behavior strongly dependent on the substituents, with hole mobilities as high as 1.0 cm2/V.s.
我们展示了由功能化并五苯和蒽二噻吩的溶液沉积薄膜制成的有机场效应晶体管的器件参数。这些材料可以通过一到两步从市售原料轻松制备，并通过简单的重结晶进行纯化。对于功能化并五苯的溶液沉积薄膜，测得空穴迁移率为0.17 cm2/V·s。功能化蒽二噻吩的行为强烈依赖于取代基，空穴迁移率高达1.0 cm2/V·s。
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