Su Zhong, Antonuk Larry E, El-Mohri Youcef, Hu Larry, Du Hong, Sawant Amit, Li Yixin, Wang Yi, Yamamoto Jin, Zhao Qihua
Department of Radiation Oncology, University of Michigan, 519 W. William St., Argus Building 1, Ann Arbor, MI 48103-4943, USA.
Phys Med Biol. 2005 Jun 21;50(12):2907-28. doi: 10.1088/0031-9155/50/12/012. Epub 2005 Jun 1.
The signal properties of polycrystalline mercuric iodide (HgI2) film detectors, under irradiation conditions relevant to mammographic, radiographic, fluoroscopic and radiotherapy x-ray imaging, are reported. Each film detector consists of an approximately 230 to approximately 460 microm thick layer of HgI2 (fabricated through physical vapour deposition or a screen-print process) and a thin barrier layer, sandwiched between a pair of opposing electrode plates. The high atomic number, high density and low effective ionization energy, W(EFF), of HgI2 make it an attractive candidate for significantly improving the performance of active matrix, flat-panel imagers (AMFPIs) for several x-ray imaging applications. The temporal behaviour of current from the film detectors in the presence and in the absence of radiation was used to examine dark current levels, the lag and reciprocity of the signal response, x-ray sensitivity and W(EFF). The results are discussed in the context of present AMFPI performance. This study provides performance data for a wide range of potential medical x-ray imaging applications from a single set of detectors and represents the first investigation of the signal properties of polycrystalline mercuric iodide for the radiotherapy application.
本文报道了多晶碘化汞(HgI₂)薄膜探测器在与乳腺摄影、放射摄影、荧光透视和放射治疗X射线成像相关的辐照条件下的信号特性。每个薄膜探测器由一层约230至约460微米厚的HgI₂(通过物理气相沉积或丝网印刷工艺制成)和一个薄阻挡层组成,夹在一对相对的电极板之间。HgI₂的高原子序数、高密度和低有效电离能W(EFF)使其成为显著提高几种X射线成像应用的有源矩阵平板成像器(AMFPI)性能的有吸引力的候选材料。利用薄膜探测器在有辐射和无辐射情况下的电流时间行为来检测暗电流水平、信号响应的滞后和互易性、X射线灵敏度和W(EFF)。并结合当前AMFPI的性能对结果进行了讨论。本研究从一组探测器中提供了广泛潜在医学X射线成像应用的性能数据,并且是首次对多晶碘化汞在放射治疗应用中的信号特性进行研究。