Department of Radiation Oncology, University of Michigan, Ann Arbor, MI 48109, USA.
Phys Med Biol. 2013 Feb 7;58(3):703-14. doi: 10.1088/0031-9155/58/3/703. Epub 2013 Jan 14.
Active matrix flat-panel imagers (AMFPIs) offer many advantages and have become ubiquitous across a wide variety of medical x-ray imaging applications. However, for mammography, the imaging performance of conventional AMFPIs incorporating CsI:Tl scintillators or a-Se photoconductors is limited by their relatively modest signal-to-noise ratio (SNR), particularly at low x-ray exposures or high spatial resolution. One strategy for overcoming this limitation involves the use of a high gain photoconductor such as mercuric iodide (HgI(2)) which has the potential to improve the SNR by virtue of its low effective work function (W(EFF)). In this study, the performance of direct-detection AMFPI prototypes employing relatively thin layers of polycrystalline HgI(2) operated under mammographic irradiation conditions over a range of 0.5 to 16.0 mR is presented. High x-ray sensitivity (corresponding to W(EFF) values of ∼19 eV), low dark current (<0.1 pA mm(-2)) and good spatial resolution, largely limited by the size of the pixel pitch, were observed. For one prototype, a detective quantum efficiency of ∼70% was observed at an x-ray exposure of ∼0.5 mR at 26 kVp.
有源矩阵平板成像仪 (AMFPIs) 具有许多优势,已广泛应用于各种医学 X 射线成像应用中。然而,对于乳房 X 光摄影,采用 CsI:Tl 闪烁体或 a-Se 光电导器的传统 AMFPIs 的成像性能受到其相对较低的信噪比 (SNR) 的限制,尤其是在低 X 射线曝光或高空间分辨率的情况下。克服这一限制的一种策略是使用高增益光电导体,如碘化汞 (HgI(2)),由于其低有效功函数 (W(EFF)),它有可能提高 SNR。在这项研究中,展示了在乳腺照射条件下工作的相对较薄的多晶 HgI(2) 层的直接检测 AMFPI 原型的性能,其 X 射线曝光范围为 0.5 至 16.0 mR。观察到高 X 射线灵敏度(对应于 ∼19 eV 的 W(EFF) 值)、低暗电流(<0.1 pA mm(-2)) 和良好的空间分辨率,主要受像素间距大小的限制。对于一个原型,在 26 kVp 时,在约 0.5 mR 的 X 射线曝光下,观察到约 70%的探测量子效率。