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二极管激光辅助根管治疗后人类牙根表面的温度变化

Temperature evolution on human teeth root surface after diode laser assisted endodontic treatment.

作者信息

Gutknecht Norbert, Franzen Rene, Meister Jörg, Vanweersch Leon, Mir Maziar

机构信息

AALZ, c/o Klinik für Zahnerhaltung, Parodontologie und Präventive Zahnheilkunde, Universitätsklinikum der RWTH Aachen, Pauwelsstrasse 30, 52074 Aachen, Germany.

出版信息

Lasers Med Sci. 2005 Sep;20(2):99-103. doi: 10.1007/s10103-005-0347-9. Epub 2005 Jul 9.

Abstract

The thermal rise threshold of an 810-nm semi-conductor diode laser on the root surface when used in root canals in vitro for laser assisted root canal treatment is investigated in this study. A total of 50 human single-rooted extracted teeth were included. For this study, the canals were enlarged up to an apical size of ISO#50 file. Laser irradiation was performed with six different settings. Specimens were irradiated at 0.6-1 W output power at the distal end of the fiber and about 1-1.5 W output power in the continuous mode (CW) as two groups. In the third group, 0.6-1 W output power, 10 ms pulse length (PL) and 10 ms interval duration (ID) were selected. In three other groups 1-1.5 W output power were used with different PL and ID as following: PL 10 and ID 10 ms, PL 10 and ID 20 ms and PL 20 and ID 20 ms. The total irradiation time was from 5 to 20 s per canal with a 200 mum in diameter and 25 mm long tip. After laser treatment, the temperature changes at the outer root surface were registered by means of NiCr-Ni measuring sensors and a T 202 thermometer. The safe temperature threshold for applying this diode laser in root canal is considered as 7 degrees C increase. To avoid increasing the temperature changes at the outer root surface related to this threshold, following total irradiation times were found: 0.6-1 W output power (10 ms PL/10 ms ID): 20 s (s), 1-1.5 W output power (10 ms/10 ms and 20 ms/20 ms): 15 s, 0.6-1 W output power CW and 1-1.5 W output power (20 ms PL/10 ms ID): 10 s and 1-1.5 W output power CW: 5 s. In the first three groups, 5 s irradiation and 5 s rest period avoided a temperature increase above the threshold of 7 degrees C).

摘要

本研究对810纳米半导体二极管激光用于体外根管激光辅助根管治疗时在牙根表面的热升阈值进行了研究。共纳入50颗人单根离体牙。在本研究中,根管扩大至ISO#50锉的根尖尺寸。采用六种不同设置进行激光照射。两组标本在光纤末端以0.6 - 1瓦输出功率、连续模式(CW)下约1 - 1.5瓦输出功率进行照射。第三组选择0.6 - 1瓦输出功率、10毫秒脉冲长度(PL)和10毫秒间隔持续时间(ID)。另外三组使用1 - 1.5瓦输出功率,不同的PL和ID如下:PL 10和ID 10毫秒、PL 10和ID 20毫秒以及PL 20和ID 20毫秒。对于直径200微米、长25毫米的尖端,每根管的总照射时间为5至20秒。激光治疗后,通过镍铬 - 镍测量传感器和T 202温度计记录牙根外表面的温度变化。将该二极管激光应用于根管的安全温度阈值视为升高7摄氏度。为避免牙根外表面温度变化超过该阈值,发现如下总照射时间:0.6 - 1瓦输出功率(10毫秒PL/10毫秒ID):20秒,1 - 1.5瓦输出功率(10毫秒/10毫秒和20毫秒/20毫秒):15秒,0.6 - 1瓦输出功率CW和1 - 1.5瓦输出功率(20毫秒PL/10毫秒ID):10秒,1 - 1.5瓦输出功率CW:5秒。在前三组中,5秒照射和5秒休息期可避免温度升高超过7摄氏度的阈值。

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