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利用自旋相关隧穿速率对量子点中的电子自旋态进行单次读出。

Single-shot readout of electron spin states in a quantum dot using spin-dependent tunnel rates.

作者信息

Hanson R, van Beveren L H Willems, Vink I T, Elzerman J M, Naber W J M, Koppens F H L, Kouwenhoven L P, Vandersypen L M K

机构信息

Kavli Institute of Nanoscience, Delft University of Technology, GA Delft, The Netherlands.

出版信息

Phys Rev Lett. 2005 May 20;94(19):196802. doi: 10.1103/PhysRevLett.94.196802. Epub 2005 May 17.

Abstract

We present a method for reading out the spin state of electrons in a quantum dot that is robust against charge noise and can be used even when the electron temperature exceeds the energy splitting between the states. The spin states are first correlated to different charge states using a spin dependence of the tunnel rates. A subsequent fast measurement of the charge on the dot then reveals the original spin state. We experimentally demonstrate the method by performing readout of the two-electron spin states, achieving a single-shot visibility of more than 80%. We find very long triplet-to-singlet relaxation times (up to several milliseconds), with a strong dependence on the in-plane magnetic field.

摘要

我们提出了一种读出量子点中电子自旋态的方法,该方法对电荷噪声具有鲁棒性,甚至在电子温度超过态间能量分裂时也可使用。首先利用隧穿率的自旋依赖性将自旋态与不同的电荷态相关联。随后对量子点上电荷的快速测量便可揭示原始自旋态。我们通过对双电子自旋态进行读出实验演示了该方法,单次可见度达到了80%以上。我们发现三重态到单重态的弛豫时间非常长(长达数毫秒),且强烈依赖于面内磁场。

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