Guo Jiandong, Lee Geunseop, Plummer E W
Department of Physics and Astronomy, The University of Tennessee, Knoxville, 37996, USA.
Phys Rev Lett. 2005 Jul 22;95(4):046102. doi: 10.1103/PhysRevLett.95.046102.
The structural (4 x 1) to (8 x 2) transition and the electronic metal to semimetal transition at the In/Si interface are studied with scanning tunneling microscopy and spectroscopy. Both transitions are gradual, resulting in a complex domain structure in the transition temperature regime. At these intermediate temperatures, the metallic (4 x 1) and semimetallic (8 x 2) domains coexist with each other and with new nanophases. By probing the two intertwined but distinguishable transitions at the atomic level, the interaction between different phases is visualized directly.
利用扫描隧道显微镜和光谱学研究了In/Si界面处的结构从(4×1)到(8×2)的转变以及电子从金属到半金属的转变。这两种转变都是渐进的，在转变温度范围内导致了复杂的畴结构。在这些中间温度下，金属性的(4×1)畴和半金属性的(8×2)畴相互共存，并与新的纳米相共存。通过在原子水平上探测这两个相互交织但又可区分的转变，不同相之间的相互作用得以直接可视化。
