Day Michelle, Carr David B, Ulrich Sasha, Ilijic Ema, Tkatch Tatiana, Surmeier D James
Department of Physiology, Northwestern University Medical School, Chicago, Illinois 60611, USA.
J Neurosci. 2005 Sep 21;25(38):8776-87. doi: 10.1523/JNEUROSCI.2650-05.2005.
Dendritically placed, voltage-sensitive ion channels are key regulators of neuronal synaptic integration. In several cell types, hyperpolarization/cyclic nucleotide gated (HCN) cation channels figure prominently in dendritic mechanisms controlling the temporal summation of excitatory synaptic events. In prefrontal cortex, the sustained activity of pyramidal neurons in working memory tasks is thought to depend on the temporal summation of dendritic excitatory inputs. Yet we know little about how this is accomplished in these neurons and whether HCN channels play a role. To gain a better understanding of this process, layer V-VI pyramidal neurons in slices of mouse prelimbic and infralimbic cortex were studied. Somatic voltage-clamp experiments revealed the presence of rapidly activating and deactivating cationic currents attributable to HCN1/HCN2 channels. These channels were open at the resting membrane potential and had an apparent half-activation voltage near -90 mV. In the same voltage range, K+ currents attributable to Kir2.2/2.3 and K+-selective leak (Kleak) channels were prominent. Computer simulations grounded in the biophysical measurements suggested a dynamic interaction among Kir2, Kleak, and HCN channel currents in shaping membrane potential and the temporal integration of synaptic potentials. This inference was corroborated by experiment. Blockade of Kir2/Kleak channels caused neurons to depolarize, leading to the deactivation of HCN channels, the initiation of regular spiking (4-5 Hz), and enhanced temporal summation of EPSPs. These studies show that HCN channels are key regulators of synaptic integration in prefrontal pyramidal neurons but that their functional contribution is dependent on a partnership with Kir2 and Kleak channels.
呈树突状分布的电压敏感离子通道是神经元突触整合的关键调节因子。在几种细胞类型中,超极化/环核苷酸门控(HCN)阳离子通道在控制兴奋性突触事件时间总和的树突机制中起着重要作用。在前额叶皮质中,锥体神经元在工作记忆任务中的持续活动被认为依赖于树突兴奋性输入的时间总和。然而,我们对这些神经元如何实现这一过程以及HCN通道是否发挥作用知之甚少。为了更好地理解这一过程,我们研究了小鼠前边缘和下边缘皮质切片中的V-VI层锥体神经元。体细胞电压钳实验揭示了可归因于HCN1/HCN2通道的快速激活和失活的阳离子电流的存在。这些通道在静息膜电位时开放,其表观半激活电压接近-90 mV。在相同电压范围内,可归因于Kir2.2/2.3和K+选择性泄漏(Kleak)通道的K+电流很显著。基于生物物理测量的计算机模拟表明,Kir2、Kleak和HCN通道电流在塑造膜电位和突触电位的时间整合方面存在动态相互作用。这一推断得到了实验的证实。阻断Kir2/Kleak通道会导致神经元去极化,从而导致HCN通道失活、引发规则放电(4-5 Hz)并增强兴奋性突触后电位(EPSP)的时间总和。这些研究表明,HCN通道是前额叶锥体神经元突触整合的关键调节因子,但其功能贡献依赖于与Kir2和Kleak通道的协同作用。