Yu Z, Burke P J
Integrated Nanosystems Research Facility, Department of Electrical Engineering and Computer Science, University of California, Irvine, California 92697-2625, USA.
Nano Lett. 2005 Jul;5(7):1403-6. doi: 10.1021/nl050738k.
The dynamical conductance of electrically contacted single-walled carbon nanotubes is measured from dc to 10 GHz as a function of source-drain voltage in both the low-field and high-field limits. The ac conductance of the nanotube itself is found to be equal to the dc conductance over the frequency range studied for tubes in both the ballistic and diffusive limit. This clearly demonstrates that nanotubes can carry high-frequency currents at least as well as dc currents over a wide range of operating conditions. Although a detailed theoretical explanation is still lacking, we present a phenomenological model of the ac impedance of a carbon nanotube in the presence of scattering that is consistent with these results.
在低场和高场极限下,测量了电接触单壁碳纳米管从直流到10GHz的动态电导随源漏电压的变化。发现在弹道和扩散极限下,在所研究的频率范围内,纳米管本身的交流电导等于直流电导。这清楚地表明,在广泛的工作条件下,纳米管至少能像直流电流一样很好地承载高频电流。尽管仍缺乏详细的理论解释,但我们提出了一个在存在散射情况下碳纳米管交流阻抗的唯象模型,该模型与这些结果一致。