Li J H, Stokes D W, Caha O, Ammu S L, Bai J, Bassler K E, Moss S C
Department of Physics, University of Houston, Houston, TX 77204-5005, USA.
Phys Rev Lett. 2005 Aug 26;95(9):096104. doi: 10.1103/PhysRevLett.95.096104.
Synchrotron x-ray diffraction is used to compare the misfit strain and composition in a self-organized nanowire array in an InAs/GaSb superlattice with InSb interfacial bonds to a planar InAs/GaSb superlattice with GaAs interfacial bonds. It is found that the morphological instability that occurs in the nanowire array results from the large misfit strain that the InSb interfacial bonds have in the nanowire array. Based on this result, we propose that tailoring the type of interfacial bonds during the epitaxial growth of III-V semiconductor films provides a novel approach for producing the technologically important morphological instability in anomalously thin layers.
同步加速器X射线衍射用于比较具有InSb界面键的InAs/GaSb超晶格自组织纳米线阵列与具有GaAs界面键的平面InAs/GaSb超晶格中的失配应变和成分。结果发现，纳米线阵列中出现的形态不稳定性是由纳米线阵列中InSb界面键所具有的大失配应变引起的。基于这一结果，我们提出，在III-V族半导体薄膜的外延生长过程中调整界面键的类型，为在异常薄层中产生技术上重要的形态不稳定性提供了一种新方法。
