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由经HPO处理的微孔SiO栅控的低压自组装氧化铟锡薄膜晶体管

Low-voltage self-assembled indium tin oxide thin-film transistors gated by microporous SiO treated by HPO.

作者信息

Dou Wei, Tan Yuanyuan

机构信息

Key Laboratory of Low Dimensional Quantum Structures and Quantum Control, Hunan Normal University Changsha 410081 People's Republic of China

Hunan First Normal University Changsha 410205 People's Republic of China.

出版信息

RSC Adv. 2019 Sep 27;9(53):30715-30719. doi: 10.1039/c9ra07166k. eCollection 2019 Sep 26.

DOI:10.1039/c9ra07166k
PMID:35529372
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9072221/
Abstract

Ultralow-voltage (0.8 V) thin-film transistors (TFTs) using self-assembled indium-tin-oxide (ITO) as the semiconducting layer and microporous SiO immersed in 5% HPO for 30 minutes with huge electric-double-layer (EDL) capacitance as the gate dielectric are fabricated at room temperature. The huge EDL specific capacitance is 8.2 μF cm at 20 Hz, and about 0.7 μF cm even at 1 MHz. Both enhancement mode ( = 0.15 V) and depletion mode ( = -0.26 V) operation are realized by controlling the thickness of the self-assembled ITO semiconducting layer. Electrical characteristics with the equivalent field-effect mobility of 65.4 cm V s, current on/off ratio of 2 × 10, and subthreshold swing of 80 mV per decade are demonstrated, which are promising for fast-switching and low-power electronics on temperature-sensitive substrates.

摘要

室温下制备了超低压（0.8 V）薄膜晶体管（TFT），其使用自组装氧化铟锡（ITO）作为半导体层，以及浸泡在5% HPO中30分钟的具有巨大双电层（EDL）电容的微孔SiO作为栅极电介质。巨大的EDL比电容在20 Hz时为8.2 μF/cm²，甚至在1 MHz时约为0.7 μF/cm²。通过控制自组装ITO半导体层的厚度，实现了增强模式（阈值电压 = 0.15 V）和耗尽模式（阈值电压 = -0.26 V）操作。展示了等效场效应迁移率为65.4 cm²/V·s、电流开/关比为2×10⁶以及亚阈值摆幅为每十倍频程80 mV的电学特性，这对于在温度敏感基板上的快速开关和低功耗电子器件具有前景。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/888c/9072221/354f3f961ebb/c9ra07166k-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/888c/9072221/ffc820983609/c9ra07166k-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/888c/9072221/1efe0641b6cc/c9ra07166k-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/888c/9072221/b33d14412e6b/c9ra07166k-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/888c/9072221/354f3f961ebb/c9ra07166k-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/888c/9072221/ffc820983609/c9ra07166k-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/888c/9072221/1efe0641b6cc/c9ra07166k-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/888c/9072221/b33d14412e6b/c9ra07166k-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/888c/9072221/354f3f961ebb/c9ra07166k-f4.jpg

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