Yoon Myung-Han, Yan He, Facchetti Antonio, Marks Tobin J
Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois, 60208, USA.
J Am Chem Soc. 2005 Jul 27;127(29):10388-95. doi: 10.1021/ja052488f.
The quest for high-performance organic thin-film transistor (OTFT) gate dielectrics is of intense current interest. Beyond having excellent insulating properties, such materials must meet other stringent requirements for optimum OTFT function: efficient low-temperature solution fabrication, mechanical flexibility, and compatibility with diverse gate materials and organic semiconductors. The OTFTs should function at low biases to minimize power consumption, hence the dielectric must exhibit large gate capacitance. We report the realization of new spin-coatable, ultrathin (<20 nm) cross-linked polymer blends exhibiting excellent insulating properties (leakage current densities approximately 10(-)(8) Acm(-)(2)), large capacitances (up to approximately 300 nF cm(-)(2)), and enabling low-voltage OTFT functions. These dielectrics exhibit good uniformity over areas approximately 150 cm(2), are insoluble in common solvents, can be patterned using standard microelectronic etching methodologies, and adhere to/are compatible with n(+)-Si, ITO, and Al gates, and with a wide range of p- and n-type semiconductors. Using these dielectrics, complementary invertors have been fabricated which function at 2 V.
对高性能有机薄膜晶体管（OTFT）栅极电介质的探索是当前研究的热点。除了具备优异的绝缘性能外，这类材料还必须满足其他严格要求，以实现最佳的OTFT功能：高效的低温溶液制备工艺、机械柔韧性以及与各种栅极材料和有机半导体的兼容性。OTFT应在低偏压下工作以最小化功耗，因此电介质必须具有大的栅极电容。我们报道了一种新型的可旋涂超薄（<20 nm）交联聚合物共混物的实现，该共混物具有优异的绝缘性能（漏电流密度约为10^(-8) A/cm²）、大电容（高达约300 nF/cm²），并能实现低电压OTFT功能。这些电介质在约150 cm²的面积上具有良好的均匀性，不溶于常见溶剂，可使用标准微电子蚀刻方法进行图案化，并且与n⁺-Si、ITO和Al栅极以及多种p型和n型半导体粘附/兼容。使用这些电介质，已制造出在2 V下工作的互补反相器。
