Yeom H W, Kim Y K, Lee E Y, Ryang K-D, Kang P G
Center for Atomic Wires and Layers and Institute of Physics and Applied Physics, Yonsei University, Seoul, 120-749, Korea.
Phys Rev Lett. 2005 Nov 11;95(20):205504. doi: 10.1103/PhysRevLett.95.205504.
Angle-resolved photoemission (ARP) is employed to investigate the electronic structure of an extremely anisotropic form of nanocrystals--GdSi(2-x) nanowires on Si(100). Using a stepped Si(100) surface, a well-ordered and uniformly oriented array of nanowires is formed along the step edges as confirmed by diffraction and microscopy. The ARP measurement discloses two distinct electronic bands near the Fermi level, which disperse one dimensionally along the nanowires. These bands are metallic with the electron filling of 1/4 and 2/5, respectively, and with the effective mass close to that of a free electron along the wires. The metallicity is robust down to 20 K, in contrast to metallic surface atomic chain systems, paving a way to further studies on one-dimensional physics of metallic nanowires.
