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用于垂直器件的氧化锌纳米线阵列的图案化与特征设计生长

Pattern and feature designed growth of ZnO nanowire arrays for vertical devices.

作者信息

He Jr H, Hsu Ju H, Wang Chun W, Lin Heh N, Chen Lih J, Wang Zhong L

机构信息

Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, Republic of China.

出版信息

J Phys Chem B. 2006 Jan 12;110(1):50-3. doi: 10.1021/jp055180j.

Abstract

An approach is demonstrated for growing aligned ZnO nanowire/nanorod arrays following a predesigned pattern and feature with controlled site, shape, distribution, and orientation. The technique relies on an integration of atomic force microscopy (AFM) nanomachining with catalytically activated vapor-liquid-solid (VLS) growth. The pattern and growth locations are defined by the catalyst distribution created by AFM, and the orientation is determined by the epitaxial growth on a single-crystal substrate. The technique opens a variety of possibilities of using nanowire arrays as sensor arrays, piezoelectric antenna arrays, nanolasers, photonic band gap crystal, biosensors, and field emitters with controlled density, location, shape, and distribution according to a designed pattern and feature.

摘要

展示了一种按照预先设计的图案和特征生长排列整齐的氧化锌纳米线/纳米棒阵列的方法,这些图案和特征具有可控的位置、形状、分布和取向。该技术依赖于原子力显微镜(AFM)纳米加工与催化激活的气-液-固(VLS)生长的结合。图案和生长位置由AFM产生的催化剂分布定义,取向由单晶衬底上的外延生长决定。该技术开启了多种可能性,可根据设计的图案和特征,将纳米线阵列用作具有可控密度、位置、形状和分布的传感器阵列、压电天线阵列、纳米激光器、光子带隙晶体、生物传感器和场发射器。

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