Pennec Y, Horn von Hoegen M, Zhu Xiaobin, Fortin D C, Freeman M R
Department of Physics, University of Alberta, Edmonton, Canada T6G 2J1.
Phys Rev Lett. 2006 Jan 20;96(2):026102. doi: 10.1103/PhysRevLett.96.026102.
An extension of the classical Ising model to a situation including a source of spin-flip excitations localized on the scale of individual spins is considered. The scenario is realized by scanning tunneling microscopy of the Si(100) surface at low temperatures. Remarkable details, corresponding to the passage of phasons through the tunnel junction, are detected by the STM within the short span between two atoms comprising an individual Si dimer.
考虑将经典伊辛模型扩展到一种情况，其中包括一个位于单个自旋尺度上的自旋翻转激发源。该情况通过低温下对Si(100)表面进行扫描隧道显微镜观察得以实现。在由单个硅二聚体组成的两个原子之间的短距离内，扫描隧道显微镜检测到了与相位子通过隧道结相对应的显著细节。
