一种从单源前驱体制备碲化锑纳米片的新途径。
A new route to antimony telluride nanoplates from a single-source precursor.
作者信息
Garje Shivram S, Eisler Dana J, Ritch Jamie S, Afzaal Mohammad, O'Brien Paul, Chivers Tristram
机构信息
The School of Chemistry, The University of Manchester, Oxford Road, Manchester M13 9PL, UK.
出版信息
J Am Chem Soc. 2006 Mar 15;128(10):3120-1. doi: 10.1021/ja0582408.
PMID:16522073
Abstract
Aerosol-assisted chemical vapor deposition (AACVD) of Sb[(TePiPr2)2N]3 results in pure hexagonal Sb2Te3 nanoplates between 375 and 475 degrees C on glass substrates, with a potential for enhanced thermoelectric properties for novel nanodevices.
摘要
在玻璃基板上，通过气溶胶辅助化学气相沉积（AACVD）法制备Sb[(TePiPr2)2N]3，在375至475摄氏度之间可得到纯的六方相Sb2Te3纳米片，这为新型纳米器件增强热电性能提供了可能。
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