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氟碳改性有机半导体:芳烃与氟代芳烃 - 噻吩低聚物薄膜性质的分子结构、电子结构及晶体结构调控

Fluorocarbon-modified organic semiconductors: molecular architecture, electronic, and crystal structure tuning of arene- versus fluoroarene-thiophene oligomer thin-film properties.

作者信息

Yoon Myung-Han, Facchetti Antonio, Stern Charlotte E, Marks Tobin J

机构信息

Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA.

出版信息

J Am Chem Soc. 2006 May 3;128(17):5792-801. doi: 10.1021/ja060016a.

Abstract

We present here the systematic synthesis and comparative physicochemical characterization of a series of regiochemically varied and core size extension-modulated arene(perfluoroarene)-thiophene oligomers. The molecules investigated are: 5,5''-diphenyl-2,2':5',2'':5'',2'''-quaterthiophene (1), 5,5'-bis[1-[4-(thien-2-yl)phenyl]]-2,2'-dithiophene (2), 4,4'-bis[5-(2,2'-dithiophenyl)]-biphenyl (3), 5,5''-diperfluorophenyl-2,2':5',2'':5'',2'''-quaterthiophene (4), 5,5'-bis[1-[4-(thien-2-yl)perfluorophenyl]]-2,2'-dithiophene (5), 4,4'-bis[5-(2,2'-dithiophenyl)]-perfluorobiphenyl (6), 5,5''-diperfluorophenyl-2,2':5',2''-tertthiophene (7), 5,5'-diperfluorophenyl-2,2'-dihiophene (8), and 5,5-diperfluorophenylthiophene (9). Trends in optical absorption and emission parameters, molecular structures as defined by single-crystal X-ray diffraction, as well as electrochemical redox processes are described. The morphologies and microstructures of the vapor-deposited films grown over a range of growth temperatures have also been characterized. Field-effect transistor (FET) measurements demonstrate that all of these materials are FET-active and, depending on the molecular architecture, exhibit comparably good p- or n-type mobility when optimum film microstructural order is achieved. A very large n-channel mobility of approximately 0.5 cm2/Vs with I(on)/I(off) ratios > 10(8) is achieved for films of 4.

摘要

我们在此展示了一系列区域化学结构多样且核心尺寸经扩展调制的芳烃(全氟芳烃)-噻吩低聚物的系统合成及其物理化学性质的比较表征。所研究的分子包括:5,5''-二苯基-2,2':5',2'':5'',2'''-四噻吩(1)、5,5'-双[1-[4-(噻吩-2-基)苯基]]-2,2'-二噻吩(2)、4,4'-双[5-(2,2'-二噻吩基)]-联苯(3)、5,5''-二全氟苯基-2,2':5',2'':5'',2'''-四噻吩(4)’、5,5'-双[1-[4-(噻吩-2-基)全氟苯基]]-2,2'-二噻吩(5)、4,4'-双[5-(2,2'-二噻吩基)]-全氟联苯(6)、5,5''-二全氟苯基-2,2':5',2''-三叔噻吩(7)、5,5'-二全氟苯基-2,2'-二噻吩(8)以及5,5-二全氟苯基噻吩(9)。描述了光吸收和发射参数的趋势、由单晶X射线衍射确定的分子结构以及电化学氧化还原过程。还对在一系列生长温度下生长的气相沉积薄膜的形态和微观结构进行了表征。场效应晶体管(FET)测量表明,所有这些材料均具有FET活性,并且根据分子结构,当实现最佳薄膜微观结构有序性时,表现出相当好的p型或n型迁移率。对于4的薄膜,实现了约0.5 cm2/Vs的非常大的n沟道迁移率,开/关电流比>10(8)。

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