Liu Yi, Cui Tianhong
Department of Mechanical Engineering, University of Minnesota, Minneapolis 55455, USA.
J Nanosci Nanotechnol. 2006 Apr;6(4):1019-23. doi: 10.1166/jnn.2006.192.
In this paper we demonstrate an approach to fabricate silica nanowires by combining "top-down" e-beam lithography and "bottom-up" layer-by-layer (LbL) nano self-assembly techniques. The simple and low-cost LbL self-assembly technique is used to grow silica nanoparticle thin film, while the e-beam lithography based lift-off technique is implemented to pattern the self-assembled thin film to nanometer scale. The silica nanowires fabricated by this method have an average width of 90 nm, while the minimum width obtained is 63 nm. Our experimental results indicate a new approach to fabricate nanowires that can be used in nanoelectronic devices and circuits.
在本文中，我们展示了一种通过结合“自上而下”的电子束光刻技术和“自下而上”的逐层（LbL）纳米自组装技术来制造二氧化硅纳米线的方法。简单且低成本的LbL自组装技术用于生长二氧化硅纳米颗粒薄膜，而基于电子束光刻的剥离技术则用于将自组装薄膜图案化为纳米尺度。通过这种方法制造的二氧化硅纳米线平均宽度为90纳米，而获得的最小宽度为63纳米。我们的实验结果表明了一种制造可用于纳米电子器件和电路的纳米线的新方法。
