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具有超疏水性的高抗反射硅表面的制备

Fabrication of highly antireflective silicon surfaces with superhydrophobicity.

作者信息

Cao Meiwen, Song Xiaoyan, Zhai Jin, Wang Jinben, Wang Yilin

机构信息

Key Laboratory of Colloid and Interface Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, People's Republic of China.

出版信息

J Phys Chem B. 2006 Jul 6;110(26):13072-5. doi: 10.1021/jp061373a.

Abstract

Highly antireflective porous silicon surfaces with superhydrophobicity were obtained by means of chemical etching and fluoroalkylsilane self-assembly. The results show that wettability and reflectivity of these surfaces strongly depend on the etching method and the resultant surface morphology. All of the four resultant porous silicon surfaces by alkaline etching, acidic etching, thick Pt-assisted acidic etching, and thin Pt-assisted acidic etching can reduce reflectance, but the efficiency differs greatly. Except for the alkaline etching, the porous silicon surfaces produced by the other three etching methods can reach superhydrophobicity after fluoroalkylsilane modification. These differences are due to the different surface morphology and roughness. Moreover, the porous silicon surface produced by thin Pt-assisted acidic etching presents abundant holes and particles with diameters ranging from nanometers to submicrometers. This morphology enables the porous silicon surface to own a very low reflectance value that is averaged to be about 3% over the whole experimental photon wavelength spanning 300-800 nm.

摘要

通过化学蚀刻和氟代烷基硅烷自组装获得了具有超疏水性的高抗反射多孔硅表面。结果表明,这些表面的润湿性和反射率强烈依赖于蚀刻方法和所得的表面形态。通过碱性蚀刻、酸性蚀刻、厚铂辅助酸性蚀刻和薄铂辅助酸性蚀刻得到的四种多孔硅表面均能降低反射率,但效率差异很大。除碱性蚀刻外,其他三种蚀刻方法制备的多孔硅表面在氟代烷基硅烷改性后均可达到超疏水性。这些差异是由于表面形态和粗糙度不同所致。此外,薄铂辅助酸性蚀刻制备的多孔硅表面呈现出丰富的孔洞和直径从纳米到亚微米不等的颗粒。这种形态使得多孔硅表面具有非常低的反射率值,在整个300 - 800 nm的实验光子波长范围内平均约为3%。

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