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Electron and hole transfer from indium phosphide quantum dots.

作者信息

Blackburn J L, Selmarten D C, Ellingson R J, Jones M, Micic O, Nozik A J

机构信息

National Renewable Energy Laboratory, Golden, Colorado 80401, USA.

出版信息

J Phys Chem B. 2005 Feb 24;109(7):2625-31. doi: 10.1021/jp046781y.

DOI:10.1021/jp046781y
PMID:16851267
Abstract

Electron- and hole-transfer reactions are studied in colloidal InP quantum dots (QDs). Photoluminescence quenching and time-resolved transient absorption (TA) measurements are utilized to examine hole transfer from photoexcited InP QDs to the hole acceptor N,N,N',N'-tetramethyl-p-phenylenediamine (TMPD) and electron transfer to nanocrystalline titanium dioxide (TiO2) films. Core-confined holes are effectively quenched by TMPD, resulting in a new approximately 4-ps component in the TA decay. It is found that electron transfer to TiO2 is primarily mediated through surface-localized states on the InP QDs.

摘要

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